公开(公告)号：US5086014A

公开(公告)日：1992-02-04

申请号：US584110

申请日：1990-09-18

申请人： Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi ,  Yuichi Matsui ,  Akimitsu Nakaue

发明人： Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi ,  Yuichi Matsui ,  Akimitsu Nakaue

IPC分类号： H01L21/205 ,  H01L21/04 ,  H01L21/20 ,  H01L21/285 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47 ,  H01L29/862 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28537 ,  H01L29/1602 ,  H01L29/45 ,  H01L29/6603 ,  H01L29/862 ,  Y10S148/14

摘要： A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.

摘要翻译： 使用金刚石膜的肖特基二极管制造方法包括通过使用由CH 4，H 2和B 2 H 6组成的源气体的CVD在低电阻p型Si衬底上形成B掺杂的p型多晶金刚石膜，在其上形成欧姆接触 并且在B掺杂的p型多晶金刚石膜上形成Al，Pt Au，Ti或W的金属电极。 源气体的B / C浓度比大于0.01ppm且小于20ppm。

公开(公告)号：US5304461A

公开(公告)日：1994-04-19

申请号：US845790

申请日：1992-03-09

申请人： Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue ,  Kazuo Kumagai ,  Koichi Miyata ,  Koji Kobashi

发明人： Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue ,  Kazuo Kumagai ,  Koichi Miyata ,  Koji Kobashi

IPC分类号： C23C16/04 ,  C23C16/27 ,  G03F7/00 ,  H01L21/20 ,  H01L21/314 ,  G03C5/00

CPC分类号： H01L21/3146 ,  C23C16/04 ,  C23C16/042 ,  C23C16/274 ,  G03F7/00 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642

摘要： Thin diamond films can be selectively deposited imagewise on a substrate by gas phase synthesis. The substrate may be either a silicon substrate or a basal thin diamond film formed beforehand on a substrate by gas phase synthesis. Where a silicon substrate is used, its surface is first abraded to give a surface roughness suitable for gas phase synthesis of diamond. When a basal thin diamond film is used, a coating material capable of withstanding a temperature higher than a substrate temperature required for gas phase synthesis of diamond and having a high etching selectivity to diamond is needed to cover areas other than where the thin diamond film is to be newly formed. When a lift-off method is used, a thin masking film having a melting point higher than a temperature to be employed for gas phase synthesis of diamond can also be used in place of the coating material described above.

摘要翻译： 薄金刚石膜可以通过气相合成成像地选择性地沉积在衬底上。 衬底可以是通过气相合成在衬底上预先形成的硅衬底或基底薄金刚石膜。 在使用硅衬底的情况下，首先对其表面进行研磨，得到适合气相合成金刚石的表面粗糙度。 当使用基底薄金刚石膜时，需要能够承受高于气相合成金刚石所需的衬底温度并且对金刚石具有高蚀刻选择性的涂层材料，以覆盖除了金刚石薄膜之外的区域 新成立。 当使用剥离方法时，也可以使用熔点高于用于气相合成金刚石的温度的薄掩模膜来代替上述涂层材料。

公开(公告)号：US5066938A

公开(公告)日：1991-11-19

申请号：US596068

申请日：1990-10-11

申请人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue

发明人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue

IPC分类号： G01K7/22 ,  H01C7/04 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01C7/041 ,  G01K7/223 ,  H01L2224/48463

摘要： A diamond thin film thermistor having a substrate, an electrically insulating diamond layer formed on the substrate by vapor-phase synthesis, a semiconducting diamond layer as a temperature-sensing part on the electrically insulating diamond layer by vapor-phase synthesis, and metal thin film electrodes attached to the semiconducting diamond layer. A plurality of such diamond thin film thermistors can simultaneously be formed on a single substrate, and the substrate is cut with a dicing saw to provide individual diamond thin film thermistor chips of the same quality.

摘要翻译： 一种金刚石薄膜热敏电阻，其具有基板，通过气相合成在基板上形成的电绝缘金刚石层，通过气相合成在电绝缘金刚石层上的作为感温部分的半导体金刚石层，以及金属薄膜 连接到半导体金刚石层的电极。 多个这样的金刚石薄膜热敏电阻可以同时形成在单个基板上，并且用切割锯切割基板以提供相同质量的单独的金刚石薄膜热敏电阻芯片。

公开(公告)号：US5373172A

公开(公告)日：1994-12-13

申请号：US544

申请日：1993-01-04

申请人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Shigeaki Miyauchi ,  Yuichi Matsui

发明人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Shigeaki Miyauchi ,  Yuichi Matsui

IPC分类号： C09K11/65 ,  H01B1/04 ,  H01L21/205 ,  H01L33/00 ,  H01L33/34 ,  H01L33/40 ,  H01L29/161 ,  H01L23/48 ,  H01L29/205

CPC分类号： H01L33/34 ,  C09K11/65 ,  H01B1/04 ,  H01L33/0033 ,  H01L33/0037 ,  H01L33/0054 ,  Y02B20/181

摘要： A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.

摘要翻译： 半导体金刚石电致发光元件包括导电衬底，在衬底上形成的半导体金刚石层，形成在半导体金刚石层上的绝缘金刚石层，形成在绝缘金刚石层上的前电极和形成在导电衬底上的背电极 与欧姆接触相同。 由半导体金刚石电致发光元件发射的光的颜色可以通过改变半导体金刚石层中的杂质含量来容易地确定。 半导体金刚石电致发光元件的发光强度可以通过改变施加在前电极和后电极上的电压而容易地改变，而不会导致电介质击穿。

公开(公告)号：US5107315A

公开(公告)日：1992-04-21

申请号：US668172

申请日：1991-03-12

申请人： Kazuo Kumagai ,  Koichi Miyata ,  Shigeaki Miyauchi ,  Yuichi Matsui ,  Koji Kobashi

发明人： Kazuo Kumagai ,  Koichi Miyata ,  Shigeaki Miyauchi ,  Yuichi Matsui ,  Koji Kobashi

IPC分类号： H01L29/78 ,  H01L21/04 ,  H01L29/16 ,  H01L29/786

CPC分类号： H01L29/1602 ,  H01L29/66045 ,  H01L29/78684

摘要： Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.

摘要翻译： 本文公开了一种MIS型金刚石场效应晶体管，其包括通过化学气相沉积（CVD）作为有源层提供的金刚石半导体层，以及还通过CVD设置在金刚石半导体层上的金刚石绝缘体层，栅电极形成在 金刚石绝缘体层，其中通过CVD在非金刚石基底上提供金刚石绝缘体底涂层，并且金刚石半导体层和金刚石绝缘体层依次设置在金刚石绝缘体底涂层上。 具有这种结构的MIS型金刚石场效应晶体管确保了在其制造中可以在CVD的非金刚石衬底上形成大面积的金刚石绝缘体底涂层，从而可以同时制造大量的元件。

公开(公告)号：US4940015A

公开(公告)日：1990-07-10

申请号：US379586

申请日：1989-07-13

申请人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

发明人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C30B25/10 ,  C30B29/04 ,  H01J37/32

CPC分类号： C23C16/274 ,  C23C16/26 ,  C23C16/277 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32284 ,  H01J37/32733 ,  H01J2237/339

摘要： A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.

摘要翻译： 用于金刚石合成的等离子体反应器包括微波发生器，连接到微波发生器的波导，设置在波导内的天线，以将沿波导传播的微波导向反应室的内部，设置在反应室的上壁上方的微波窗口 波导，由（a）气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室，（b）侧壁中的反应气体入口和气体出口，以及（c）基板 保持器设置在与微波窗口相对的反应室内，以便朝向和远离微波窗口移动，以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。 仅在反应室的中心部分产生等离子体，从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。 用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。

公开(公告)号：US5160405A

公开(公告)日：1992-11-03

申请号：US670590

申请日：1991-03-18

申请人： Shigeaki Miyauchi ,  Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi

发明人： Shigeaki Miyauchi ,  Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi

IPC分类号： C30B33/12 ,  C30B29/04 ,  C30B33/00 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  C30B29/04 ,  C30B33/00

摘要： Described is an etching method of a diamond film which comprises providing a diamond film in an atmosphere of a gas containing at least oxygen and/or hydrogen and subjecting the diamond film to an irradiation of an electron beam generated by direct current discharge through a pattern of a mask. In this condition, when the diamond film is contacted with the plasma produced by the electron beam in the atmosphere, the unmasked areas are irradiated by the electron beam, and converted to graphite. The graphite is more readily etched by the plasma, so that the diamond film can be etched at a high rate. The etching through a mask ensures a fine etched pattern of the diamond film. In addition, a diamond film with a large area can be etched by this method.

摘要翻译： 描述了金刚石膜的蚀刻方法，其包括在至少含有氧和/或氢的气体的气氛中提供金刚石膜，并使金刚石膜通过直流放电产生的电子束的照射， 一个面具 在这种情况下，当金刚石膜与大气中由电子束产生的等离子体接触时，未掩蔽的区域被电子束照射，并转化为石墨。 通过等离子体更容易地蚀刻石墨，使得金刚石膜可以高速蚀刻。 通过掩模的蚀刻确保金刚石膜的精细蚀刻图案。 此外，可以通过该方法蚀刻具有大面积的金刚石膜。

公开(公告)号：US6080378A

公开(公告)日：2000-06-27

申请号：US924701

申请日：1997-09-05

申请人： Yoshihiro Yokota ,  Takeshi Tachibana ,  Koichi Miyata ,  Koji Kobashi

发明人： Yoshihiro Yokota ,  Takeshi Tachibana ,  Koichi Miyata ,  Koji Kobashi

IPC分类号： C30B29/04 ,  C23C16/27 ,  C30B25/10

CPC分类号： C23C16/274 ,  C23C16/278 ,  C30B25/105

摘要： Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.

摘要翻译： 金刚石薄膜和金刚石薄膜生长的新方法可以改善利用金刚石薄膜的产品的性能。 在室温下的阴极发光中，金刚石膜CL1 / CL2的积分强度比等于或大于1/20，其中CL1是短于300nm的波长区域中的发射带的积分强度，而CL2 是从300nm到800nm的波长区域的发射带的积分强度。 通过沉积在由铂，铂合金，铱，铱合金，镍，镍合金，硅中的至少一种构成的基板或膜上，可以获得在表面上具有强烈聚结的这种高品质金刚石膜 ，和金属硅化物。

公开(公告)号：US5298766A

公开(公告)日：1994-03-29

申请号：US854910

申请日：1992-03-20

申请人： Koji Kobashi ,  Kozo Nishimura ,  Shigeaki Miyauchi ,  Kazuo Kumagai ,  Rie Katoh

发明人： Koji Kobashi ,  Kozo Nishimura ,  Shigeaki Miyauchi ,  Kazuo Kumagai ,  Rie Katoh

IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/861 ,  H01L29/48 ,  H01L29/56

CPC分类号： H01L29/1602 ,  H01L29/861

摘要： A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.

摘要翻译： 金刚石异质结二极管具有改进的整流特性，具有小的反向电流和大的正向电流。 通过微波等离子体CVD以B掺杂p型半导体金刚石层，绝缘未掺杂金刚石层（比1（μm）薄）的顺序，在低电阻p型硅衬底上形成三层， n型半导体硅层。 欧姆电极形成在n型半导体硅层的正面和衬底的背面。 在正向偏压下，电场被施加到中间绝缘层以加速空穴和电子的传输。 在反向偏置下，由于中间层，能带具有缺口以及势垒，从而防止空穴从n型半导体金刚石层传输到p型半导体金刚石层，导致改进的整流特性 。

公开(公告)号：US5755879A

公开(公告)日：1998-05-26

申请号：US560078

申请日：1995-11-17

申请人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

发明人： Yoshihiro Shintani ,  Takeshi Tachibana ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshihiro Yokota ,  Koji Kobashi

IPC分类号： C30B29/04 ,  C23C16/02 ,  C23C16/27 ,  C30B25/02 ,  H01L31/10 ,  H03H3/08 ,  C30B29/20

CPC分类号： C23C16/274 ,  C23C16/0209 ,  C23C16/0254 ,  C30B25/02 ,  C30B29/04

摘要： A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

摘要翻译： 提出了一种制造用于通过化学气相沉积（CVD）在大面积上以低成本生长单晶金刚石膜的衬底的方法。 衬底材料是Pt或其合金，其已经经历单次或多次清洁循环，辊压机和高温退火工艺，以使衬底材料的厚度为0.5mm或更小，或最优选为0.2 （111）或两者的角度偏差的（111）晶面或倾斜晶体表面出现在基板的整个表面或至少部分表面上。 退火在高于800℃的温度下进行。本发明将可以显着改善金刚石膜的各种特性，从而将其投入实际应用中。