发明授权
- 专利标题: Nonvolatile semiconductor memory device
- 专利标题(中): 非易失性半导体存储器件
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申请号: US355480申请日: 1989-05-23
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公开(公告)号: US5097446A公开(公告)日: 1992-03-17
- 发明人: Kazuyoshi Shoji , Takaaki Hagiwara , Tadashi Muto , Shun-ichi Saeki , Yasurou Kubota , Kazuto Izawa , Yoshiaki Kamigaki , Shin-ichi Minami , Yuko Nabetani
- 申请人: Kazuyoshi Shoji , Takaaki Hagiwara , Tadashi Muto , Shun-ichi Saeki , Yasurou Kubota , Kazuto Izawa , Yoshiaki Kamigaki , Shin-ichi Minami , Yuko Nabetani
- 申请人地址: JPX Tokyo JPX Tokyo
- 专利权人: Hitachi, Ltd.,Hitachi VLSI Engineering Corp.
- 当前专利权人: Hitachi, Ltd.,Hitachi VLSI Engineering Corp.
- 当前专利权人地址: JPX Tokyo JPX Tokyo
- 优先权: JPX63-125468 19880523; JPX63-151658 19880620
- 主分类号: G11C16/32
- IPC分类号: G11C16/32 ; G11C16/34
摘要:
A time circuit is provided for a nonvolatile memory device which can electrically be written into. When the write operation on a particular memory cell lasting a relatively long period of time is specified from an external device, the memory device stops the write operation on that memory cell, irrespective of the external write operaiton specification, when the time set on the timer circuit has elapsed. The nonvolatile memory device has memory cells, each consisting of a single transistor. The erase operation on the memory cells is controlled according to a current flowing through these memory cells.
公开/授权文献
- US5643162A Exercise apparatus 公开/授权日:1997-07-01