发明授权
US5109263A Semiconductor device with optimal distance between emitter and trench
isolation
失效
具有发射极和沟槽隔离之间最佳距离的半导体器件
- 专利标题： Semiconductor device with optimal distance between emitter and trench isolation
- 专利标题（中）： 具有发射极和沟槽隔离之间最佳距离的半导体器件
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申请号： US556365申请日： 1990-07-24
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公开(公告)号： US5109263A公开(公告)日： 1992-04-28
- 发明人: Mitsuo Nanba , Tohru Nakamura , Kazuo Nakazato , Takeo Shiba , Katsuyoshi Washio , Kiyoji Ikeda , Takahiro Onai , Masatada Horiuchi
- 申请人： Mitsuo Nanba , Tohru Nakamura , Kazuo Nakazato , Takeo Shiba , Katsuyoshi Washio , Kiyoji Ikeda , Takahiro Onai , Masatada Horiuchi
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX1-194108 19890728; JPX1-231736 19890908
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/762 ; H01L29/08 ; H01L29/10 ; H01L29/732
摘要：
A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.
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