发明授权
- 专利标题: Amplifying feedback FET semiconductor element
- 专利标题(中): 放大反馈FET半导体元件
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申请号: US732934申请日: 1991-07-19
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公开(公告)号: US5160984A公开(公告)日: 1992-11-03
- 发明人: Mitsuru Mochizuki , Tadashi Takagi , Shuji Urasaki
- 申请人: Mitsuru Mochizuki , Tadashi Takagi , Shuji Urasaki
- 申请人地址: JPX
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX1-66901 19890317
- 主分类号: H03F1/34
- IPC分类号: H03F1/34 ; H03F1/48 ; H03F3/193 ; H03F3/60 ; H03F3/68
摘要:
In an amplifying feedback-type FET semiconductor element for use as a wide-band microwave amplifier in telecommunications system such as a radar, a monolithic IC feedback circuit is located between at least two parallel FET cells of an FET semiconductor element and also between gate and drain lead electrodes of the FET semiconductor element. The feedback circuit includes at least two connecting lines and at least one passive element and is connected to the two lead electrodes. With this arrangement, it is possible to reduce the total length of said connecting lines to a minimum, thus guaranteeing a frequency characteristic showing a flat gain over a wide band.
公开/授权文献
- US5887453A Protective material 公开/授权日:1999-03-30
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