发明授权
- 专利标题： Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus
- 专利标题（中）： 具有绝热结构的半导体器件，其制造方法和加热装置
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申请号： US617793申请日： 1990-11-26
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公开(公告)号： US5168332A公开(公告)日： 1992-12-01
- 发明人: Iwao Kunishima , Tomonori Aoyama , Kyoichi Suguro
- 申请人： Iwao Kunishima , Tomonori Aoyama , Kyoichi Suguro
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-307322 19891127
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/225 ; H01L21/28 ; H01L21/331 ; H01L21/336 ; H01L29/41 ; H01L29/43 ; H01L29/45 ; H01L29/49
摘要：
A semiconductor device including a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further includes metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate.
公开/授权文献
- US4560373A Surgical nozzle apparatus 公开/授权日：1985-12-24
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