公开(公告)号：US5168332A

公开(公告)日：1992-12-01

申请号：US617793

申请日：1990-11-26

申请人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

发明人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/66272 ,  H01L21/2257 ,  H01L29/41 ,  H01L29/45 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66575 ,  Y10S148/019 ,  Y10S257/90

摘要： A semiconductor device including a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further includes metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate.

公开(公告)号：US5162263A

公开(公告)日：1992-11-10

申请号：US755820

申请日：1991-09-06

申请人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

发明人： Iwao Kunishima ,  Tomonori Aoyama ,  Kyoichi Suguro

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/66272 ,  H01L21/2257 ,  H01L29/41 ,  H01L29/45 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66575 ,  Y10S148/019 ,  Y10S257/90

摘要： A semiconductor device comprises a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further comprises metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate. The method also includes cooling the top of the substrate to form a temperature gradient that results in increased dopant concentration at the bottom of a silicide layer.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底。 绝缘膜和金属膜依次形成在半导体衬底的主顶表面上。 第二导电类型的杂质扩散层选择性地形成在半导体衬底的主顶表面上。 半导体器件还包括由半导体衬底的构成元件和金属元素组成的金属化合物层。 金属化合物层以不与绝缘膜接触的方式形成在杂质扩散层中，并且半导体衬底的主背面侧上的金属化合物层具有平行于该半导体衬底的顶表面形成的面 半导体衬底。 该方法还包括冷却衬底的顶部以形成导致硅化物层底部的掺杂剂浓度增加的温度梯度。

公开(公告)号：US5670808A

公开(公告)日：1997-09-23

申请号：US591153

申请日：1996-01-25

申请人： Kazuya Nishihori ,  Yoshiaki Kitaura ,  Yoshikazu Tanabe ,  Tomonori Aoyama ,  Kyoichi Suguro ,  Kumi Okuwada ,  Shuichi Komatsu ,  Kazuhide Abe

发明人： Kazuya Nishihori ,  Yoshiaki Kitaura ,  Yoshikazu Tanabe ,  Tomonori Aoyama ,  Kyoichi Suguro ,  Kumi Okuwada ,  Shuichi Komatsu ,  Kazuhide Abe

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/095 ,  H01L29/92 ,  H01L27/108

CPC分类号： H01L27/0629 ,  H01L27/0605 ,  H01L27/10852 ,  H01L28/40

摘要： A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.

摘要翻译： 其中SiO 2膜和第一布线层依次布置在GaAs衬底上的半导体器件。 在第一布线层上形成电容器。 电容器包括从下侧依次具有由Ti层，Mo层和Pt层构成的多层结构的下电极。 电容器还包括由钛酸锶制成的电介质膜。 电容器还包括从下侧依次具有由WNx层（120μm）和W层（300nm）组成的多层结构的上部电极。 与电介质膜接触的上电极的表面由氮化钨层限定。

公开(公告)号：US6090699A

公开(公告)日：2000-07-18

申请号：US736324

申请日：1996-10-23

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915

摘要： A method of making a semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 制造半导体器件的方法包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的用于防止金属扩散的绝缘阻挡层 构成布线层，形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US06794286B2

公开(公告)日：2004-09-21

申请号：US09558053

申请日：2000-04-26

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US5929473A

公开(公告)日：1999-07-27

申请号：US842646

申请日：1997-04-15

申请人： Kazuya Nishihori ,  Yoshiaki Kitaura ,  Yoshikazu Tanabe ,  Tomonori Aoyama ,  Kyoichi Suguro ,  Kumi Okuwada ,  Shuichi Komatsu ,  Kazuhide Abe

发明人： Kazuya Nishihori ,  Yoshiaki Kitaura ,  Yoshikazu Tanabe ,  Tomonori Aoyama ,  Kyoichi Suguro ,  Kumi Okuwada ,  Shuichi Komatsu ,  Kazuhide Abe

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/095 ,  H01L29/92 ,  H01L29/812

CPC分类号： H01L27/0629 ,  H01L27/0605 ,  H01L27/10852 ,  H01L28/40

摘要： An SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 nm) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.

摘要翻译： 在GaAs衬底上依次排列有SiO 2膜和第一布线层。 在第一布线层上形成电容器。 电容器包括从下侧依次具有由Ti层，Mo层和Pt层构成的多层结构的下电极。 电容器还包括由钛酸锶制成的电介质膜。 电容器还包括从下侧依次具有由WNx层（120nm）和W层（300nm）构成的多层结构的上部电极。 与电介质膜接触的上电极的表面由氮化钨层限定。

公开(公告)号：US5592024A

公开(公告)日：1997-01-07

申请号：US330998

申请日：1994-10-28

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L29/41 ,  H01L29/43

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915

摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。

公开(公告)号：US08828853B2

公开(公告)日：2014-09-09

申请号：US13415232

申请日：2012-03-08

申请人： Tomonori Aoyama ,  Kiyotaka Miyano

发明人： Tomonori Aoyama ,  Kiyotaka Miyano

IPC分类号： H01L21/20

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/78696 ,  H01L29/7926

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括在衬底上形成非晶半导体膜。 该方法还包括通过用微波照射衬底来从非晶半导体膜形成多晶半导体膜来退火非晶半导体膜。 该方法还包括形成其通道为多晶半导体膜的晶体管。

公开(公告)号：US08759205B2

公开(公告)日：2014-06-24

申请号：US12883463

申请日：2010-09-16

申请人： Tomonori Aoyama ,  Yusuke Oshiki ,  Kiyotaka Miyano

发明人： Tomonori Aoyama ,  Yusuke Oshiki ,  Kiyotaka Miyano

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： H01L21/20 ,  H01L29/66

摘要： According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.

摘要翻译： 根据一个实施例，一种制造半导体器件的方法，其中使用微波对包含微晶的非晶半导体膜进行退火，以使用微晶作为核使包含微晶的非晶半导体膜结晶。

公开(公告)号：US08198155B2

公开(公告)日：2012-06-12

申请号：US12693985

申请日：2010-01-26

申请人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

发明人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L29/51

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/82385 ,  H01L29/1054 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659

摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.

摘要翻译： 根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。 该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜， 形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜， 并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度 层形成在第一区域中。