The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.