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公开(公告)号：US4976818A
公开(公告)日：1990-12-11
申请号：US520654
申请日：1990-04-24
CPC分类号： G03F7/094 , G03F7/004 , Y10S438/949
摘要： A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure, by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
摘要翻译： 通过用离子喷淋照射处理多层抗蚀剂的底层或中间层或含硅抗蚀剂，能够在电子束或聚焦离子束曝光时形成精细图案而不进行充电的精细图案形成方法 或还原溶剂。
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公开(公告)号：US5169494A
公开(公告)日：1992-12-08
申请号：US742550
申请日：1991-08-08
摘要： The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.
摘要翻译： 本发明提供一种形成精细图案的方法，包括以下步骤：在半导体衬底上形成有机聚合物膜并进行热处理，在有机聚合物膜上形成无机膜并进行热处理，在无机膜上形成电子 抗蚀剂膜并对其进行热处理，在抗蚀剂膜上绘制图案，将其显影以形成抗蚀剂图案，并使用抗蚀剂图案作为掩模蚀刻无机膜和有机聚合物膜，其中改进包括使用选择的一种物质 由聚苯硫醚，其衍生物和由式（I）表示的聚合物组成：其中n为正整数，用于形成至少一个有机聚合物膜和电子 光束抗蚀膜。 根据本发明，可以防止入射电子的充电，从而保持无间隙对接和降低覆盖精度，并形成精确和垂直的精细抗蚀剂图案。
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公开(公告)号：US5306601A
公开(公告)日：1994-04-26
申请号：US93032
申请日：1993-07-19
CPC分类号： B82Y30/00 , B82Y10/00 , G03F7/038 , G03F7/039 , C08G2261/1412 , C08G2261/3223 , Y10S430/143
摘要： Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.
摘要翻译： 本发明提供了一种精细图案形成方法，该方法由于在单层或多层抗蚀剂中使用聚烷基噻吩型导电聚合物或季铵离子型聚合物而防止充电光束写入时的充电现象 。
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公开(公告)号：US5030549A
公开(公告)日：1991-07-09
申请号：US371289
申请日：1989-06-26
IPC分类号： G03F7/105 , G03F1/68 , G03F1/80 , G03F7/004 , G03F7/039 , G03F7/09 , G03F7/11 , G03F7/26 , G03F7/38 , G03F7/40 , H01L21/027 , H01L21/30
CPC分类号： G03F7/039 , G03F7/0047 , G03F7/093
摘要： Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.
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公开(公告)号：US4936951A
公开(公告)日：1990-06-26
申请号：US262871
申请日：1988-10-26
CPC分类号： G03F7/094 , G03F7/004 , Y10S438/949
摘要： A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
摘要翻译： 通过用离子淋洗处理多层抗蚀剂的底层或中间层或含硅抗蚀剂，可以提供在电子束或聚焦离子束曝光时无需充电形成精确精细图案的精细图案形成方法 照射或还原溶剂。
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6.发明授权Scanning electron microscope and a method of displaying cross sectional profiles using the same 失效扫描电子显微镜和使用其显示跨部分轮廓的方法
公开(公告)号：US5057689A
公开(公告)日：1991-10-15
申请号：US583541
申请日：1990-09-17
申请人： Noboru Nomura , Hideo Nakagawa , Taichi Koizumi , Kenji Harafuji , Mitsuhiro Okuni , Norimichi Anazawa
发明人： Noboru Nomura , Hideo Nakagawa , Taichi Koizumi , Kenji Harafuji , Mitsuhiro Okuni , Norimichi Anazawa
IPC分类号： H01J37/141 , H01J37/153
CPC分类号： H01J37/141 , H01J37/153
摘要： A scanning electron microscope is disclosed in which an objective lens includes a first pole piece and a second pole piece. The first pole piece is provided with a hole through which an electron beam passes, and is disposed between an electron gun for emitting the electron beam and the second pole piece. The second pole piece has a planar portion on which a specimen is placed, and the second pole piece being mounted on a supporting block movable in a plane substantially perpendicular to the projecting direction of the electron beam.
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7.发明授权Method of forming a resist pattern utilizing correlation between latent image height, resist pattern linewidth and surface modification layer width 失效利用潜像高度，抗蚀剂图案线宽和表面改性层宽度之间的相关性形成抗蚀剂图案的方法
公开(公告)号：US5773174A
公开(公告)日：1998-06-30
申请号：US890685
申请日：1997-07-09
申请人： Taichi Koizumi , Takahiro Matsuo , Masayuki Endo
发明人： Taichi Koizumi , Takahiro Matsuo , Masayuki Endo
CPC分类号： G03F7/70658 , G03F7/038 , G03F7/20 , G03F7/265 , G03F7/30 , G03F7/38 , G03F7/70675
摘要： A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found. Additionally, also from the second correlation, develop time corresponding to a target resist pattern linewidth and to an estimated exposure energy dose is found, and according to the develop time found, a resist pattern is formed.
摘要翻译： 获得第一相关性，其是在抗蚀剂层上曝光之后产生的潜像高度与给定长度的显影时间之间的抗蚀剂图案线宽之间的相关性。 此外，获得第二相关性，其是每个曝光能量剂量的显影时间与抗蚀剂图案线宽之间的相关性。 确定在实际曝光的抗蚀剂层上产生的潜像的高度。 从第一相关性可以看出，作为对应于潜像高度和给定长度的显影时间的抗蚀剂图案线宽的估计抗蚀剂图案线宽。 从第二相关性可以看出，作为与给定的显影时间长度对应的曝光能量剂量和估计的抗蚀图案线宽的估计曝光能量剂量。 另外，从第二相关性，也可以发现对应于目标抗蚀剂图案线宽的显影时间和估计的曝光能量剂量，并且根据发现的显影时间，形成抗蚀剂图案。
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8.发明授权Method of forming a resist pattern utilizing correlation between latent image height, resist pattern linewidth and exposure parameter 失效利用潜像高度，抗蚀剂图案线宽和曝光参数之间的相关性形成抗蚀剂图案的方法
公开(公告)号：US5756242A
公开(公告)日：1998-05-26
申请号：US557701
申请日：1995-11-13
申请人： Taichi Koizumi , Takahiro Matsuo , Masayuki Endo
发明人： Taichi Koizumi , Takahiro Matsuo , Masayuki Endo
CPC分类号： G03F7/70658 , G03F7/038 , G03F7/20 , G03F7/265 , G03F7/30 , G03F7/38 , G03F7/70675
摘要： A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found. Additionally, also from the second correlation, develop time corresponding to a target resist pattern linewidth and to an estimated exposure energy dose is found, and according to the develop time found, a resist pattern is formed.
摘要翻译： 获得第一相关性，其是在抗蚀剂层上曝光之后产生的潜像高度与给定长度的显影时间之间的抗蚀剂图案线宽之间的相关性。 此外，获得第二相关性，其是每个曝光能量剂量的显影时间与抗蚀剂图案线宽之间的相关性。 确定在实际曝光的抗蚀剂层上产生的潜像的高度。 从第一相关性可以看出，作为对应于潜像高度和给定长度的显影时间的抗蚀剂图案线宽的估计抗蚀剂图案线宽。 从第二相关性可以看出，作为与给定的显影时间长度对应的曝光能量剂量和估计的抗蚀图案线宽的估计曝光能量剂量。 另外，从第二相关性，也可以发现对应于目标抗蚀剂图案线宽的显影时间和估计的曝光能量剂量，并且根据发现的显影时间，形成抗蚀剂图案。
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公开(公告)号：US06977133B2
公开(公告)日：2005-12-20
申请号：US10390948
申请日：2003-03-17
申请人： Taichi Koizumi , Akio Misaka
发明人： Taichi Koizumi , Akio Misaka
CPC分类号： G03F1/36 , G03F7/70441
摘要： A photomask is used for transferring a mask pattern onto a semiconductor substrate. The mask pattern includes a junction at which two line patterns are connected to each other with one line pattern being orthogonal to the other line pattern so as to form a T-shape, or a proximity portion at which two line patterns are located close to each other with one line pattern being substantially orthogonal to the other line pattern so as to form a T-shape. A small pattern is formed on a side edge of the line pattern in the vicinity of the junction or the proximity portion so as to form a wide portion of the line pattern. The small pattern is provided within the range between 0.79 and 1.8 λ/(NA·K) of a distance from the neighboring side edge of the other line pattern, where λ is the wavelength of exposure illumination light, NA is the numerical aperture of a lens used, and K is a transfer reduction ratio.
摘要翻译： 光掩模用于将掩模图案转印到半导体衬底上。 掩模图案包括两个线图案彼此连接的连接点，其中一条线图案与另一条线图形正交以便形成T形，或两个线图案靠近每个位置的邻近部分 另一个，其中一个线图案基本上与另一个线图案正交，从而形成T形。 在接合部或接近部附近的线图案的侧边缘上形成小图案，以形成线条图案的宽部分。 小图案提供在距离另一条线图案的相邻侧边缘的距离在0.79和1.8λ/（NA.K）之间的范围内，其中λ是曝光照明光的波长，NA是数字孔径 所使用的透镜，K是转印缩小率。
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10.发明授权Method of forming a resist pattern utilizing correlation between latent image height, resist pattern linewidth and thermal annealing parameter 失效利用潜像高度，抗蚀剂图案线宽与热退火参数之间的相关性形成抗蚀剂图案的方法
公开(公告)号：US5763124A
公开(公告)日：1998-06-09
申请号：US890680
申请日：1997-07-09
申请人： Taichi Koizumi , Takahiro Matsuo
发明人： Taichi Koizumi , Takahiro Matsuo
CPC分类号： G03F7/70658 , G03F7/038 , G03F7/20 , G03F7/265 , G03F7/30 , G03F7/38 , G03F7/70675
摘要： A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist pattern linewidth, is found. Additionally, also from the second correlation, develop time corresponding to a target resist pattern linewidth and to an estimated exposure energy dose is found, and according to the develop time found, a resist pattern is formed.
摘要翻译： 获得第一相关性，其是在抗蚀剂层上曝光之后产生的潜像高度与给定长度的显影时间之间的抗蚀剂图案线宽之间的相关性。 此外，获得第二相关性，其是每个曝光能量剂量的显影时间与抗蚀剂图案线宽之间的相关性。 确定在实际曝光的抗蚀剂层上产生的潜像的高度。 从第一相关性可以看出，作为对应于潜像高度和给定长度的显影时间的抗蚀剂图案线宽的估计抗蚀剂图案线宽。 从第二相关性可以看出，作为对应于给定的显影时间长度和估计的抗蚀图案线宽的曝光能量剂量的估计曝光能量剂量。 另外，从第二相关性，也可以发现对应于目标抗蚀剂图案线宽的显影时间和估计的曝光能量剂量，并且根据发现的显影时间，形成抗蚀剂图案。
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