摘要:
The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.
摘要:
A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure, by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
摘要:
A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
摘要:
Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.
摘要:
Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.
摘要:
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group,a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.
摘要:
Disclosed is a method of isolating a transistor perfectly by employing a selective oxidation technology (LOCOS technology). More particularly, vertical openings are formed in the surface of {100} silicon substrate, and oxidation resistant films are formed of this surface and in part of the side walls of these openings. In succession, by etching with an etchant having an orientation anisotropy, dents are formed at high precision in the side walls of the openings. By oxidizing using the oxidation resistant film as the mask, an oxide film growing out from a dent in the opening side wall is connected with another oxide film growing out from an adjacent dent. The transistor thus formed in the active region of the silicon electrically isolated from the substrate is small in parasitic capacitance and may be formed into a small size, so that it possesses the features suited to VLSI, that is, high speed, low power consumption, and processability to high density integration.
摘要:
A signal processing method for an ATM switching network formed by connecting a plurality of ATM switching networks in which header conversion tables of line interfaces can be rewritten by control cells, includes in response to occurrence of an abnormality in a call control processor of a ATM switching system A, informing an ATM switching system B of the occurrence of the abnormality, transferring call control information in the ATM switching system A to the ATM switching system B, rewriting header conversion tables included in a plurality of line interfaces of the ATM switching system A by using control cells generated by the ATM switching system A and thereby transferring signal channel cells arriving at the ATM switching system A after occurrence of the abnormality to the ATM switching system B, and rewriting header conversion tables included in a plurality of line interfaces of the ATM switching system A by using control cells generated by the ATM switching system B and thereby making a call control processor of the ATM switching system B effect route control of information channel cells within the ATM switching system A.
摘要:
Provided is a process for preparing a cephem compound of the formula: ##STR1## wherein R.sup.3 is hydrogen or methoxy, R.sup.4 is hydrogen or a residue of a nucleophilic compound, R.sup.5 is hydroxyl or a protected hydroxyl, and R.sup.8 is hydrogen or halogen, or a pharmaceutically acceptable salt or ester thereof, which comprises introducing an acyl group of the formula: ##STR2## wherein R.sup.5 and R.sup.8 are as defined above into the amino group of the molecule of the formula: ##STR3## wherein R.sup.3 and R.sup.4 are as defined above or a salt or ester thereof.
摘要:
Herein disclosed is a data communication system in which a plurality of node equipments are linked to a common signal transmission line so that the data may be communicated between the respective node equipments. The data communication system is characterized: in that at least one of the node equipments includes means for generating and transmitting repeatedly for a predetermined period the channel which contains a data transmission bit and a validity bit for the former bit; and in that each of the node equipments linked to the common signal transmission line partly sends out the data through said channel and partly makes the validity indicating bit indicate an invalid state, when the speed of said data is so slower than the predetermined period of said channel that the data to be sent out for the predetermined period are out of time thereby to make it possible to effect the data transmission at an arbitrary speed shorter than said predetermined period.Herein also disclosed is a data communication system in which a plurality of node equipments are jointed by a common transmission loop line and in which the information of multiple channels is repeatedly transmitted for a predetermined period to said transmission loop line so that the channel information may be sent and received between terminal equipments linked to said node equipments. The data communication system is characterized in that an identical pattern for synchronization is inserted into and transmitted by the plural head channels of each period so that the synchronization is effected at each of said node equipments by detecting the synchronizing pattern received by means of a detecting circuit.