发明授权
- 专利标题： Avalanche photodiode with AliNAsP cap layer
- 专利标题（中）： AVALANCHE与ALINASP CAP层的光电
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申请号： US726802申请日： 1991-07-08
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公开(公告)号： US5189309A公开(公告)日： 1993-02-23
- 发明人: Morio Wada , Masahito Seko , Youichi Sekiguchi , Hideto Iwaoka
- 申请人： Morio Wada , Masahito Seko , Youichi Sekiguchi , Hideto Iwaoka
- 申请人地址： JPX Tokyo
- 专利权人： Optical Measurement Technology Development Co., Ltd.
- 当前专利权人： Optical Measurement Technology Development Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-209584 19900807
- 主分类号： H01L31/10
- IPC分类号： H01L31/10 ; H01L31/0304 ; H01L31/105 ; H01L31/18
摘要：
A photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less dependence on the incident light spectral width by using a material with smaller composition ratio of Ga for the light-absorbing layer to extend the absorption edge toward the longer wavelengths.
公开/授权文献
- US5882028A Shock absorptive support structure 公开/授权日：1999-03-16
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