公开(公告)号：US5189309A

公开(公告)日：1993-02-23

申请号：US726802

申请日：1991-07-08

申请人： Morio Wada ,  Masahito Seko ,  Youichi Sekiguchi ,  Hideto Iwaoka

发明人： Morio Wada ,  Masahito Seko ,  Youichi Sekiguchi ,  Hideto Iwaoka

IPC分类号： H01L31/10 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/18

CPC分类号： H01L31/03046 ,  H01L31/105 ,  H01L31/1844 ,  Y02E10/544

摘要： A photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less dependence on the incident light spectral width by using a material with smaller composition ratio of Ga for the light-absorbing layer to extend the absorption edge toward the longer wavelengths.