发明授权
US5192393A Method for growing thin film by beam deposition and apparatus for
practicing the same
失效
通过光束沉积法生长薄膜的方法及其实施方法
- 专利标题: Method for growing thin film by beam deposition and apparatus for practicing the same
- 专利标题(中): 通过光束沉积法生长薄膜的方法及其实施方法
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申请号: US524980申请日: 1990-05-18
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公开(公告)号: US5192393A公开(公告)日: 1993-03-09
- 发明人: Yasushi Muranaka , Hisao Yamashita , Akira Kato , Hiroshi Miyadera
- 申请人: Yasushi Muranaka , Hisao Yamashita , Akira Kato , Hiroshi Miyadera
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX1-128850 19890524
- 主分类号: C30B25/02
- IPC分类号: C30B25/02 ; C23C14/22 ; C23C16/24 ; C23C16/27 ; C23C16/50 ; C23F4/00 ; H01L21/205 ; H01L31/04
摘要:
A method for growing a thin film on a substrate of metal or ceramics by beam deposition comprising the steps of:(I) producing from starting gases ions of elements or compounds thereof to be deposited on the substrate;(II) irradiating the ions produced in step (I) with electromagneti waves to electronically excite at least one sort of said ions; and(III) impacting an ion beam comprising the ions excited in step (II) onto said substrate to deposit thereon, thereby growing a film, and an apparatus for practicing the method. The method enables the formation of thin films having a higher crystallinity by electronically exciting ions or neutral species to increase the internal energy thereof and then impacting a beam comprising the excited ions or neutral species onto the substrate.
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