发明授权
- 专利标题： Etch stop layer using polymers
- 专利标题（中）： 使用聚合物的蚀刻停止层
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申请号： US426147申请日： 1989-10-24
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公开(公告)号： US5198298A公开(公告)日： 1993-03-30
- 发明人: Jacob D. Haskell , Subhash Gupta
- 申请人： Jacob D. Haskell , Subhash Gupta
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/311 ; H01L21/768
摘要：
An etch stop player (22) for permitting distinguishing between two similar layers (20, 24), such as two oxide layers, during etching is provided. The etch stop layer comprises a silicon-oxyhalide polymer, preferably a silicon-oxyfluoride polymer. Use of the polymer as an etch stop layer permits closer placement of metal conductor surfaces (12, 12') and contacts (14').
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