发明授权
- 专利标题： Stacked surrounding wall capacitor
- 专利标题（中）： 堆叠式周边墙体电容器
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申请号： US614770申请日： 1990-11-16
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公开(公告)号： US5234858A公开(公告)日： 1993-08-10
- 发明人: Pierre C. Fazan , Howard E. Rhodes , Charles H. Dennison , Yauh-Ching Liu
- 申请人： Pierre C. Fazan , Howard E. Rhodes , Charles H. Dennison , Yauh-Ching Liu
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108
摘要：
A stacked surrounding wall capacitor (SSWC) using a modified stacked capacitor storage cell fabrication process. The SSWC is made up of polysilicon structure, having an elongated v-shaped cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 50% without enlarging the surface area defined for a normal buried digit line stacked capacitor cell.
公开/授权文献
- US5773267A D29 shuttle phasmids and uses thereof 公开/授权日：1998-06-30
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