发明授权
US5236547A Method of forming a pattern in semiconductor device manufacturing process
失效
在半导体器件制造工艺中形成图案的方法
- 专利标题： Method of forming a pattern in semiconductor device manufacturing process
- 专利标题（中）： 在半导体器件制造工艺中形成图案的方法
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申请号： US765518申请日： 1991-09-25
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公开(公告)号： US5236547A公开(公告)日： 1993-08-17
- 发明人: Shigeki Takahashi , Yasuhiro Shiraki
- 申请人： Shigeki Takahashi , Yasuhiro Shiraki
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX2-254885 19900925; JPX3-11480 19910108; JPX3-205737 19910816
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/308 ; H01L21/311 ; H01L21/335 ; H01L29/775 ; H01L31/0352 ; H01L33/00 ; H01S5/12 ; H01S5/20 ; H01S5/34
摘要：
In a method of forming a pattern in semiconductor device manufacturing process, a thin film consisting of a silicon nitride film is formed on a substrate. Ga ions are implanted by a focussed ion beam into a selected region of the thin film. At this point, a pattern to be formed is defined by the selected region. Subsequently, the thin film is dry etched by CF.sub.4. At this point, the selected region into which the ions are implanted functions as an etching inhibition region.
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