发明授权
- 专利标题： Manufacturing method of contact hole arrangement of a semiconductor device
- 专利标题（中）： 半导体器件的接触孔布置的制造方法
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申请号： US822460申请日： 1992-01-17
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公开(公告)号： US5236867A公开(公告)日： 1993-08-17
- 发明人: Takashi Furuta , Shuichi Nishida
- 申请人： Takashi Furuta , Shuichi Nishida
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electronics Corporation
- 当前专利权人： Matsushita Electronics Corporation
- 当前专利权人地址： JPX Osaka
- 优先权： JPX62-287901 19871113
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
A semiconductor device includes first and second oxide film regions formed on a surface of a semiconductor substrate. A first impurity diffusion region is located at a distance from one of the first and second oxide regions. A second impurity diffusion region is located along the surface of the semiconductor substrate and partially overlaps the first impurity diffusion region. The width of the second impurity diffusion region is greater than that of the first impurity diffusion region. A contact hole is provided extending substantially over the second impurity diffusion region. The contact hole has a first side wall defined by one of the first and second oxide film regions and a second side wall defined by an insulating film. The width of the opening of the contact hole is greater than or equal to the width of the first impurity diffusion region. A conductive film is formed along the bottom portion and along the opposite side walls of the contact hole. A wiring layer is provided connected to the conductive film.
公开/授权文献
- US5896062A Amplifier with switched DC bias voltage feedback 公开/授权日：1999-04-20
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