公开(公告)号：US5113234A

公开(公告)日：1992-05-12

申请号：US653158

申请日：1991-02-11

申请人： Takashi Furuta ,  Shuichi Nishida

发明人： Takashi Furuta ,  Shuichi Nishida

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L29/08 ,  H01L29/41

CPC分类号： H01L29/0847

摘要： A semiconductor device includes first and second oxide film regions formed on a surface of a semiconductor substrate. A first impurity diffusion region is located at a distance from one of the first and second oxide regions. A second impurity diffusion region is located along the surface of the semiconductor substrate and partially overlaps the first impurity diffusion region. The width of the second impurity diffusion region is greater than that of the first impurity diffusion region. A contact hole is provided extending substantially over the second impurity diffusion region. The contact hole has a first side wall defined by one of the first and second oxide film regions and a second side wall defined by an insulating film. The width of the opening of the contact hole is greater than or equal to the width of the first impurity diffusion region. A conductive film is formed along the bottom portion and along the opposite side walls of the contact hole. A wiring layer is provided connected to the conductive film.

公开(公告)号：US07169468B2

公开(公告)日：2007-01-30

申请号：US09419798

申请日：1999-10-18

申请人： Toshihiko Miura ,  Masahito Kawasaki ,  Shunji Suzuki ,  Shuichi Nishida

发明人： Toshihiko Miura ,  Masahito Kawasaki ,  Shunji Suzuki ,  Shuichi Nishida

IPC分类号： B32B5/16 ,  B05D5/00

CPC分类号： H01F41/026 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/265 ,  Y10T428/31

摘要： A resin bonded rare earth magnet, compression molded from rare earth-transition alloy powder and thermosetting resin, having a magnet 1 comprising a mixture of thermosetting resin and rare earth-transition alloy powder with a particle size of between 20 and 300 microns, a filling material 3 with particle size between 0.1 and 15 microns which is used to fill in the depressions 2 on the surface of said magnet 1 and is then fixed with said thermosetting resin, and a corrosion inhibiting coat 4 made from synthetic resin applied to the surface of said magnet 1 which has been rendered smooth by the application of said filling material into the depressions on its surface.

摘要翻译： 一种由稀土 - 过渡合金粉末和热固性树脂压缩成型的树脂粘合稀土磁体，具有包含热固性树脂和粒径为20-300微米的稀土 - 过渡合金粉末的混合物的磁体1，填充物 材料3，其粒径为0.1至15微米，用于填充所述磁体1表面上的凹陷2，然后用所述热固性树脂固定，并将合成树脂制成的腐蚀抑制涂层4施加到 所述磁体1通过将所述填充材料施加到其表面上的凹陷中而变得光滑。

公开(公告)号：US5986752A

公开(公告)日：1999-11-16

申请号：US934288

申请日：1997-09-19

申请人： Yuhkoh Morito ,  Shuichi Nishida

发明人： Yuhkoh Morito ,  Shuichi Nishida

IPC分类号： G02B23/26 ,  A61B1/002 ,  G02B23/24 ,  A61B1/07

CPC分类号： G02B23/2423 ,  G02B23/2469 ,  A61B1/002

摘要： The attempt is to improve the light utilization effect by concentrating and irradiating the light on the observation area, and at the same time, to be able to simply wipe the end clean even when dirtied by oil. Optical fiber light guide 7 for illumination is arranged concentrically on the peripheral part of image incident end part 6 in of image guide 6 that has been inserted inside of pipe 2; that light exit end part 7 out is arranged closer to objective lens 3 than the focal point position of objective lens 3. By doing this, after the light that exits and disperses from light exit end part 7 out has advanced along the optical axis facing the linearly in relation to objective lens 3, the light advances by following along the optical axis which diffracts the light in direction passing through the focal point of the object to be observed side of objective lens 3, and it is possible to irradiate nearly all of the light within the range which can be observed by image guide 6, thus improving the light utilization efficiency. Also, because the end aperture part of pipe 2 in which image guide 6 and image light guide 7 is filled up by the objective lens, the end can be easily wiped clean even when dirtied with oil, etc.

摘要翻译： 尝试通过在观察区域上集中和照射光来提高光利用效果，同时，即使在油污时也能够简单地擦拭端部清洁。 用于照明的光纤光导7同心地布置在插入管2内的图像引导件6中的图像入射端部6的周边部分上; 该光出射端部7 out比物镜3的焦点位置更靠近物镜3配置。通过这样做，在从光出射端部7出射并分散的光沿着面向 相对于物镜3线性地，光沿着通过物镜3的被观察物体的焦点的方向衍射光的光轴前进，并且可以照射几乎所有的 在由图像引导件6可以观察到的范围内的光，从而提高光利用效率。 此外，由于图像引导件6和图像引导件7被物镜填充的管2的端部开口部，所以即使在油等污染的情况下也可以容易地清洁该端部。

公开(公告)号：US5236867A

公开(公告)日：1993-08-17

申请号：US822460

申请日：1992-01-17

申请人： Takashi Furuta ,  Shuichi Nishida

发明人： Takashi Furuta ,  Shuichi Nishida

IPC分类号： H01L29/08

CPC分类号： H01L29/0847

摘要： A semiconductor device includes first and second oxide film regions formed on a surface of a semiconductor substrate. A first impurity diffusion region is located at a distance from one of the first and second oxide regions. A second impurity diffusion region is located along the surface of the semiconductor substrate and partially overlaps the first impurity diffusion region. The width of the second impurity diffusion region is greater than that of the first impurity diffusion region. A contact hole is provided extending substantially over the second impurity diffusion region. The contact hole has a first side wall defined by one of the first and second oxide film regions and a second side wall defined by an insulating film. The width of the opening of the contact hole is greater than or equal to the width of the first impurity diffusion region. A conductive film is formed along the bottom portion and along the opposite side walls of the contact hole. A wiring layer is provided connected to the conductive film.

摘要翻译： 半导体器件包括形成在半导体衬底的表面上的第一和第二氧化膜区域。 第一杂质扩散区域位于与第一和第二氧化物区域中的一个相距一定距离处。 第二杂质扩散区沿着半导体衬底的表面设置并部分地与第一杂质扩散区重叠。 第二杂质扩散区域的宽度大于第一杂质扩散区域的宽度。 提供了一个基本上在第二杂质扩散区上延伸的接触孔。 接触孔具有由第一和第二氧化膜区域中的一个限定的第一侧壁和由绝缘膜限定的第二侧壁。 接触孔的开口宽度大于或等于第一杂质扩散区的宽度。 导电膜沿接触孔的底部和相对的侧壁形成。 提供连接到导电膜的布线层。

公开(公告)号：US20100289076A1

公开(公告)日：2010-11-18

申请号：US12808473

申请日：2008-11-11

申请人： Shuichi Nishida ,  Toyokazu Ohnishi ,  Tomoyuki Shoji

发明人： Shuichi Nishida ,  Toyokazu Ohnishi ,  Tomoyuki Shoji

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/7397

摘要： A technique is presented for further reducing on-resistance (or on-voltage) in a vertical semiconductor device provided with a carrier shielding layer.A semiconductor substrate 20 of a semiconductor device 10 comprises a channel section 10A and a non-channel section 10B. An emitter region 26 is formed in the channel section 10A, this emitter region 26 making contact with a side surface of a trench gate 30 and being electrically connected to an emitter electrode 28. The emitter region 26 is not formed in a body region 25 of the non-channel section 10B. In a plan view, an occupied area ratio of the area which a carrier shielding layer 52 located in the non-channel section 10B occupies within the non-channel section 10B is larger than an occupied area ratio of the area which the carrier shielding layer 52 located in the channel section 10A occupies within the channel section 10A.

摘要翻译： 提出了一种技术，用于在具有载体屏蔽层的垂直半导体器件中进一步降低导通电阻（或导通电压）。 半导体器件10的半导体衬底20包括沟道部分10A和非沟道部分10B。 发射极区域26形成在沟道部分10A中，该发射极区域26与沟槽栅极30的侧表面接触并且电连接到发射极电极28.发射极区域26不形成在 非通道部分10B。 在平面图中，位于非通道部10B中的载流子屏蔽层52所占据的区域的占用面积比大于非沟道部分10B中的载流子屏蔽层52所占的面积比 位于通道部分10A中的通道部分10A占据通道部分10A。

公开(公告)号：US20060056883A1

公开(公告)日：2006-03-16

申请号：US10938782

申请日：2004-09-13

申请人： Koichi Watanabe ,  Shinichi Kuramoto ,  Mitsuo Yamamoto ,  Shuichi Nishida ,  Wataru Suzuki ,  Masahiro Sato ,  Atsuyuki Kitamura

发明人： Koichi Watanabe ,  Shinichi Kuramoto ,  Mitsuo Yamamoto ,  Shuichi Nishida ,  Wataru Suzuki ,  Masahiro Sato ,  Atsuyuki Kitamura

IPC分类号： G03G15/01

CPC分类号： G03G15/0163 ,  G03G15/0121 ,  G03G15/0173 ,  G03G2215/0177

摘要： An image forming apparatus has an image forming carrier, an image forming portion that forms an image on the image forming carrier, an intermediate transfer medium to which the image on the image forming carrier is primarily transferred, and a transfer portion that secondarily transfers to a recording medium the image primarily transferred to the intermediate transfer medium. An area where the image forming carrier and the intermediate transfer medium are opposed includes a primary transfer area where the image on the image forming carrier is transferred to the intermediate transfer medium and a secondary transfer area where the image on the intermediate transfer medium is transferred to the recording medium.

摘要翻译： 图像形成装置具有图像形成载体，在图像形成载体上形成图像的图像形成部，图像形成载体上的图像主要被转印到的中间转印介质，以及二次转印到 记录介质，图像主要传送到中间转印介质。 图像形成载体和中间转印介质相对的区域包括将图像形成载体上的图像转印到中间转印介质的一次转印区域和将中间转印介质上的图像转印到二次转印区域 记录介质。