发明授权
- 专利标题： Method for forming a semiconductor device
- 专利标题（中）： 半导体器件形成方法
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申请号： US967294申请日： 1992-10-27
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公开(公告)号： US5240558A公开(公告)日： 1993-08-31
- 发明人: Hisao Kawasaki , Umesh Sharma , Howard C. Kirsch
- 申请人： Hisao Kawasaki , Umesh Sharma , Howard C. Kirsch
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/033 ; H01L21/311 ; H01L21/8242
摘要：
The surface area of a polysilicon electrode is increased by sputtering non-coalescing islands (20) of aluminum onto a silicon dioxide layer (18), which is overlying the polysilicon electrode. The sputtering process allows uniform island formation to be achieved independent of the deposition surface. The non-coalescing islands are then used as a mask, and a portion of the buffer layer (22) and a portion of the polysilicon electrode (26) are etched to form pillar-like regions (30) within the polysilicon electrode.
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