发明授权
- 专利标题: High performance semiconductor devices and their manufacture
- 专利标题(中): 高性能半导体器件及其制造
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申请号: US879650申请日: 1992-05-07
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公开(公告)号: US5242854A公开(公告)日: 1993-09-07
- 发明人: Alan G. Solheim , Christopher S. Blair , Vida Ilderem , Ali A. Iranmanesh
- 申请人: Alan G. Solheim , Christopher S. Blair , Vida Ilderem , Ali A. Iranmanesh
- 申请人地址: CA Santa Clara
- 专利权人: National Semiconductor Corporation
- 当前专利权人: National Semiconductor Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L21/32 ; H01L21/331 ; H01L21/762 ; H01L29/732
摘要:
A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for submicron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.
公开/授权文献
- US5973579A Ladder type intermediate frequency filter 公开/授权日:1999-10-26