公开(公告)号：US5661046A

公开(公告)日：1997-08-26

申请号：US285839

申请日：1994-08-04

申请人： Vida Ilderem ,  Ali A. Iranmanesh ,  Alan G. Solheim ,  Christopher S. Blair ,  Rick C. Jerome ,  Rajeeva Lahri ,  Madan Biswal

发明人： Vida Ilderem ,  Ali A. Iranmanesh ,  Alan G. Solheim ,  Christopher S. Blair ,  Rick C. Jerome ,  Rajeeva Lahri ,  Madan Biswal

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/092 ,  H01L21/265

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/8249 ,  H01L27/0623 ,  Y10S148/009 ,  Y10S438/919

摘要： A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.

摘要翻译： 一种BiCMOS方法和装置。 BiCMOS器件通过使用环绕硅化物触点，改进的MOS栅极形成，使用n型和p型LDD，在双极晶体管中形成非常浅的基极区域以及通过用于基极区域的单独注入来实现改进的性能 的双极晶体管和MOSFET的源极/漏极。

公开(公告)号：US5338694A

公开(公告)日：1994-08-16

申请号：US847876

申请日：1992-03-09

申请人： Vida Ilderem ,  Ali A. Iranmanesh ,  Alan G. Solheim ,  Christopher S. Blair ,  Rick C. Jerome ,  Rajeeva Lahri ,  Madan Biswal

发明人： Vida Ilderem ,  Ali A. Iranmanesh ,  Alan G. Solheim ,  Christopher S. Blair ,  Rick C. Jerome ,  Rajeeva Lahri ,  Madan Biswal

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/092 ,  H01L21/265

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/8249 ,  H01L27/0623 ,  Y10S148/009 ,  Y10S438/919

摘要： A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.

摘要翻译： 一种BiCMOS方法和装置。 BiCMOS器件通过使用环绕硅化物触点，改进的MOS栅极形成，使用n型和p型LDD，在双极晶体管中形成非常浅的基极区域以及通过用于基极区域的单独注入来实现改进的性能 的双极晶体管和MOSFET的源极/漏极。

公开(公告)号：US5242854A

公开(公告)日：1993-09-07

申请号：US879650

申请日：1992-05-07

申请人： Alan G. Solheim ,  Christopher S. Blair ,  Vida Ilderem ,  Ali A. Iranmanesh

发明人： Alan G. Solheim ,  Christopher S. Blair ,  Vida Ilderem ,  Ali A. Iranmanesh

IPC分类号： H01L21/285 ,  H01L21/32 ,  H01L21/331 ,  H01L21/762 ,  H01L29/732

CPC分类号： H01L29/6628 ,  H01L21/28525 ,  H01L21/32 ,  H01L21/76205 ,  H01L29/732

摘要： A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for submicron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.

摘要翻译： 高性能双极晶体管及其制造方法。 通过在外部基极的单晶区域中形成的自对准硅化物来降低基极电阻，从而消除多晶硅到单晶接触电阻以及分流单晶非本征基极区域的电阻。 在硅化物形成之前，选择性地去除来自多晶硅局部互连的侧壁的氧化物。 因此，多晶硅互连层的选定侧壁也变成硅化物。 这导致互连电阻的显着降低，特别是对于亚微米几何形状。 还公开了用于形成场氧化物区域和用于形成双极晶体管的基极区域的改进的技术。

公开(公告)号：US5139961A

公开(公告)日：1992-08-18

申请号：US503498

申请日：1990-04-02

申请人： Alan G. Solheim ,  Bamdad Bastani ,  James L. Bouknight ,  George E. Ganschow ,  Bancherd Delong ,  Rajeeva Lahri ,  Steve M. Leibiger ,  Christopher S. Blair ,  Rick C. Jerome ,  Madan Biswal ,  Tad Davies ,  Vida Ilderem ,  Ali A. Iranmanesh

发明人： Alan G. Solheim ,  Bamdad Bastani ,  James L. Bouknight ,  George E. Ganschow ,  Bancherd Delong ,  Rajeeva Lahri ,  Steve M. Leibiger ,  Christopher S. Blair ,  Rick C. Jerome ,  Madan Biswal ,  Tad Davies ,  Vida Ilderem ,  Ali A. Iranmanesh

IPC分类号： H01L29/73 ,  H01L21/285 ,  H01L21/32 ,  H01L21/331 ,  H01L21/762 ,  H01L29/732

CPC分类号： H01L29/6628 ,  H01L21/28525 ,  H01L21/32 ,  H01L21/76205 ,  H01L29/732 ,  Y10S148/01

摘要： A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for sub-micron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.

公开(公告)号：US5338696A

公开(公告)日：1994-08-16

申请号：US22708

申请日：1993-03-01

申请人： Vida Ilderem ,  Ali A. Iranmanesh ,  Alan G. Solheim ,  Christopher S. Blair ,  Rick C. Jerome ,  Rajeeva Lahri ,  Madan Biswal

发明人： Vida Ilderem ,  Ali A. Iranmanesh ,  Alan G. Solheim ,  Christopher S. Blair ,  Rick C. Jerome ,  Rajeeva Lahri ,  Madan Biswal

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/092 ,  H01L21/265

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/8249 ,  H01L27/0623 ,  Y10S148/009 ,  Y10S438/919

摘要： A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wraparound silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.

摘要翻译： 一种BiCMOS方法和装置。 BiCMOS器件通过使用环绕硅化物触点，改进的MOS栅极形成，使用n型和p型LDD，在双极晶体管中形成非常浅的基极区域以及通过单独的植入物来实现改进的性能， 双极晶体管和MOSFET的源极/漏极。

公开(公告)号：US5231042A

公开(公告)日：1993-07-27

申请号：US835653

申请日：1992-02-13

申请人： Vida Ilderem ,  Alan G. Solheim ,  Rick C Jerome

发明人： Vida Ilderem ,  Alan G. Solheim ,  Rick C Jerome

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/8249 ,  H01L23/522 ,  H01L27/06

CPC分类号： H01L29/665 ,  H01L21/28525 ,  H01L21/8249 ,  H01L23/5226 ,  H01L27/0623 ,  H01L2924/0002 ,  Y10S148/147

摘要： A method for formation of silicide structures on a semiconductor device. Oxide sidewalls are formed upon and selectively removed from polysilicon contacts. Refractory metal is deposited and heated, unreacted metal is removed, leaving a metal silicide on selected polysilicon sidewalls.

摘要翻译： 一种在半导体器件上形成硅化物结构的方法。 氧化物侧壁形成在多晶硅触点上并选择性地从多晶硅触点去除。 沉积和加热耐火金属，去除未反应的金属，在选定的多晶硅侧壁上留下金属硅化物。

公开(公告)号：US5107321A

公开(公告)日：1992-04-21

申请号：US503336

申请日：1990-04-02

申请人： Vida Ilderem ,  Alan G. Solheim ,  Rick C. Jerome

发明人： Vida Ilderem ,  Alan G. Solheim ,  Rick C. Jerome

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8249 ,  H01L23/522 ,  H01L27/06 ,  H01L27/092

CPC分类号： H01L29/665 ,  H01L21/28525 ,  H01L21/8249 ,  H01L23/5226 ,  H01L27/0623 ,  H01L2924/0002

摘要： A BiCMOS device is revealed. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.

公开(公告)号：US06188816B1

公开(公告)日：2001-02-13

申请号：US09390213

申请日：1999-09-08

申请人： Alan G. Solheim

发明人： Alan G. Solheim

IPC分类号： G02B628

CPC分类号： H04J14/0213 ,  H04J14/0206 ,  H04J14/0209

摘要： A filter topography is possible that can reduce the overall cost of a single Optical Add-Drop Multiplexer (OADM) or a series of OADMs that are within a network. The key is to have one of the wavelengths of a WDM signal being input to a filtering apparatus empty. The filtering apparatus can then with a reduced cost filter the received WDM signal such that a channel at a wavelength adjacent to the empty wavelength is removed and a channel is inserted at the previously empty wavelength. In one implementation of this topology within an OADM, a single filter can be used to perform both filtering operations due to the empty wavelength ensuring no corruption of the removed channel at the adjacent wavelength. In another implementation, the filtering operations are performed by two separate filters that each have asymmetrically reduced tolerances. In either case in which there is a reduced number of filters or reduced tolerances for those filters, a reduction in cost will be found.

摘要翻译： 过滤器形状可能会降低单个光插件多路复用器（OADM）或网络内的一系列OADM的总体成本。 关键是将WDM信号的波长中的一个输入到滤波装置中。 然后，滤波装置可以以降低的成本对接收到的WDM信号进行滤波，使得与空白波长相邻的波长处的信道被去除，并且在先前空的波长处插入信道。 在OADM内的这种拓扑的一个实施方式中，由于空波长，单个滤波器可以用于执行两个滤波操作，从而确保在相邻波长处不被去除的信道的损坏。 在另一个实现中，滤波操作由两个分别具有不对称减小的公差的单独的滤波器来执行。 在这些过滤器数量减少或容许偏差减小的情况下，会降低成本。

公开(公告)号：US06522671B1

公开(公告)日：2003-02-18

申请号：US09307812

申请日：1999-05-10

申请人： Alan G. Solheim ,  Colin Kelly ,  Matthew Brown ,  Chris Knapton

发明人： Alan G. Solheim ,  Colin Kelly ,  Matthew Brown ,  Chris Knapton

IPC分类号： H04J304

CPC分类号： H04J3/1611 ,  H04J3/1682 ,  H04J3/22

摘要： A protocol independent multiplexer is described that allows for multiple different protocols that operate at different bit rates to be combined and output in a format that may have yet another bit rate. The multiplexer includes a series of inputting devices that are each coupled to a respective buffering device, a mapping device coupled to each of the buffering devices, and an outputting device coupled to the mapping device. Each of the inputting devices receive an input optical signal and forwards recovered data information to the corresponding buffering device. The buffering devices store the data information and output to the mapping device, the outputting being controlled by the mapping device to ensure that the buffering devices remain approximately half full. The mapping device formats the data information into individual data units and outputs the data units to the outputting device which subsequently multiplexes the data units. One key advantage of this protocol independent multiplexer is that only one piece of hardware is required for the operation of numerous different protocols.

公开(公告)号：US07590153B2

公开(公告)日：2009-09-15

申请号：US10349939

申请日：2003-01-24

申请人： Alan G. Solheim ,  Colin Kelly ,  Matthew Brown ,  Chris Knapton

发明人： Alan G. Solheim ,  Colin Kelly ,  Matthew Brown ,  Chris Knapton

IPC分类号： H04J3/02 ,  H04J3/04 ,  G06F11/00

CPC分类号： H04J3/1611 ,  H04J3/1682 ,  H04J3/22

摘要： A protocol independent multiplexer is described that allows for multiple different protocols that operate at different bit rates to be combined and output in a format that may have yet another bit rate. The multiplexer includes a series of inputting devices that are each coupled to a respective buffering device, a mapping device coupled to each of the buffering devices, and an outputting device coupled to the mapping device. Each of the inputting devices receive an input optical signal and forwards recovered data information to the corresponding buffering device. The buffering devices store the data information and output to the mapping device, the outputting being controlled by the mapping device to ensure that the buffering devices remain approximately half full. The mapping device formats the data information into individual data units and outputs the data units to the outputting device which subsequently multiplexes the data units. One key advantage of this protocol independent multiplexer is that only one piece of hardware is required for the operation of numerous different protocols.

摘要翻译： 描述了一种协议无关的多路复用器，其允许以不同比特率操作的多个不同协议以可能具有另一个比特率的格式组合和输出。 多路复用器包括一系列输入设备，每个输入设备都耦合到相应的缓冲设备，耦合到每个缓冲设备的映射设备以及耦合到映射设备的输出设备。 每个输入装置接收输入光信号并将恢复的数据信息转发到相应的缓冲装置。 缓冲设备存储数据信息并输出到映射设备，输出由映射设备控制，以确保缓冲设备保持大约一半满。 映射设备将数据信息格式化为单独的数据单元，并将数据单元输出到随后复用数据单元的输出设备。 该协议独立复用器的一个关键优点在于，对于许多不同协议的操作，仅需要一块硬件。