发明授权
- 专利标题: Semiconductor device manufacturing apparatus
- 专利标题(中): 半导体装置制造装置
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申请号: US762355申请日: 1991-09-19
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公开(公告)号: US5275629A公开(公告)日: 1994-01-04
- 发明人: Natsuo Ajika , Masahiro Shimizu , Takehisa Yamaguchi
- 申请人: Natsuo Ajika , Masahiro Shimizu , Takehisa Yamaguchi
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-15680 19910117
- 主分类号: G01J1/28
- IPC分类号: G01J1/28 ; C23C16/48 ; H01L21/00 ; H01L21/205 ; H01L21/285 ; H01L21/302 ; H01L21/3065 ; H01L21/31 ; H01L21/66 ; C23C16/00
摘要:
A semiconductor device manufacturing apparatus has a first space and a second space in a process chamber in which a semiconductor wafer is accommodated, the first and second spaces being separated by the semiconductor wafer. A process gas port opens into the first space adjacent to the obverse surface of the semiconductor wafer, and an infrared light transmission window is formed in a wall of the chamber at the second space facing the reverse surface of the semiconductor wafer. No layers are deposited on the reverse surface of the semiconductor wafer and the infrared light transmission window so that the emissivity at the reverse surface of the semiconductor wafer is not changed during layer deposition. The temperature during processing can therefore be monitored accurately with a pyrometer, and a reduction in the transmissivity of the window is prevented.
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