发明授权
- 专利标题： Planar varactor frequency multiplier devices with blocking barrier
- 专利标题（中）： 平面变容二极管倍频器具有阻塞屏障
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申请号： US842297申请日： 1992-02-26
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公开(公告)号： US5278444A公开(公告)日： 1994-01-11
- 发明人: Udo Lieneweg , Margaret A. Frerking , Joseph Maserjian
- 申请人： Udo Lieneweg , Margaret A. Frerking , Joseph Maserjian
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人地址： DC Washington
- 主分类号： H01L29/93
- IPC分类号： H01L29/93 ; H03B19/14 ; H03B19/16 ; H03B19/18 ; H01L29/90
摘要：
A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n.sup.+ doped layer (N.sup.+) of semiconductor material utilizes an n doped semiconductor material for a drift region (N) over the back contact layer in order to overcome a space charge limitation in the drift region. A barrier layer (B) is grown over the drift region, after a sheet of n-type doping (N.sub.sheet) which forms a positive charge over the drift region, N, to internally bias the diode structure. Two metal contacts are deposited over the barrier layer, B, with a gap between them. To increase the power output of the diodes of a given size, stacked diodes may be provided by alternating barrier layers and drift region layers, starting with a barrier layer and providing a positive charge sheet at the interface of a barrier on both sides of each drift region layer with n-type .delta. doping. The stacked diodes may be isolated by etching or ion implantation to the back contact layer N.sup.+ and a separate metal contact deposited on each stacked diode.
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