公开(公告)号：US4953955A

公开(公告)日：1990-09-04

申请号：US204739

申请日：1988-06-10

申请人： Joseph Maserjian

发明人： Joseph Maserjian

IPC分类号： G02F1/017 ,  H01L31/0352

CPC分类号： B82Y20/00 ,  G02F1/01716 ,  H01L31/035236

摘要： Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.

摘要翻译： 多重量子阱（MQW）结构（12）用于提供实时，可靠，高性能，光学寻址的空间光调制器（SLM）（10）。 光学寻址的SLM包括在光写入信号18的穿透深度内的量子阱层（12a）的垂直堆叠，多个具有预定隧道时间的空间电荷势垒（12b），通过控制掺杂和厚度。 包含量子阱层的材料具有比空间电荷阻挡层低的带隙。 写入信号调制读取信号（20）。 器件的调制灵敏度高，不需要外部电压源。 在优选实施例中，具有用于驱动MQW光伏的交错掺杂半导体层的SLM的特征在于使用类似于在多个量子阱中填充二维状态引起的Moss-Burnstein偏移的移位，从而允许高 非常狭窄的井的调制灵敏度。 阵列（30）可以形成有多个调制器。

公开(公告)号：US5278444A

公开(公告)日：1994-01-11

申请号：US842297

申请日：1992-02-26

申请人： Udo Lieneweg ,  Margaret A. Frerking ,  Joseph Maserjian

发明人： Udo Lieneweg ,  Margaret A. Frerking ,  Joseph Maserjian

IPC分类号： H01L29/93 ,  H03B19/14 ,  H03B19/16 ,  H03B19/18 ,  H01L29/90

CPC分类号： H03B19/14 ,  H01L29/93 ,  H03B19/16 ,  H03B19/18 ,  Y10S977/761 ,  Y10S977/888

摘要： A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n.sup.+ doped layer (N.sup.+) of semiconductor material utilizes an n doped semiconductor material for a drift region (N) over the back contact layer in order to overcome a space charge limitation in the drift region. A barrier layer (B) is grown over the drift region, after a sheet of n-type doping (N.sub.sheet) which forms a positive charge over the drift region, N, to internally bias the diode structure. Two metal contacts are deposited over the barrier layer, B, with a gap between them. To increase the power output of the diodes of a given size, stacked diodes may be provided by alternating barrier layers and drift region layers, starting with a barrier layer and providing a positive charge sheet at the interface of a barrier on both sides of each drift region layer with n-type .delta. doping. The stacked diodes may be isolated by etching or ion implantation to the back contact layer N.sup.+ and a separate metal contact deposited on each stacked diode.

摘要翻译： 包括由半导体材料的n +掺杂层（N +）背靠背连接的两个半导体二极管结构的平面三次谐波器利用用于后接触层上的漂移区（N）的n掺杂半导体材料，以克服 漂移区域的空间电荷限制。 在漂移区域N上形成正电荷的一片n型掺杂（N sheet）之后，在漂移区上生长势垒层（B），以内部偏置二极管结构。 两个金属触点沉积在阻挡层B上，它们之间有间隙。 为了增加给定尺寸的二极管的功率输出，堆叠的二极管可以由交替的阻挡层和漂移区层提供，从阻挡层开始，并在每个漂移的两侧的屏障的界面处提供正电荷片 具有n型（δ）掺杂的区域层。 堆叠的二极管可以通过蚀刻或离子注入到背接触层N +和沉积在每个堆叠二极管上的单独的金属触点来隔离。

公开(公告)号：US5132763A

公开(公告)日：1992-07-21

申请号：US651882

申请日：1991-02-07

申请人： Joseph Maserjian

发明人： Joseph Maserjian

IPC分类号： H01L31/0352 ,  H01L31/09

CPC分类号： B82Y20/00 ,  H01L31/035263 ,  H01L31/09

摘要： A new approach to long-wave-infrared (LWIR) technology is based on molecular beam epitaxy (MBE) growth of holeimmobilized doping superlattices (12) in narrow band gap III-V semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures (10, 10', 10") suitable for focal plane arrays. The objective of this approach is an LWIR detector possessing the advantages of high detectivity performance, to wavelengths of at least about 16 .mu.m, at operating temperatures of 65K, where long-duration space refrigeration is plausible.

摘要翻译： 长波红外（LWIR）技术的一种新方法是基于狭窄带隙III-V半导体中特定的InAs和InSb的空穴掺杂超晶格（12）的分子束外延（MBE）生长。 这种超晶格被并入适用于焦平面阵列的检测器结构（10,10 + 40,10“）中。 这种方法的目标是在65K的工作温度下具有高检测性能的波长至少约16μm的LWIR检测器，其中长时间空间制冷是合理的。

公开(公告)号：US5401953A

公开(公告)日：1995-03-28

申请号：US125966

申请日：1993-09-23

申请人： Michael G. Spencer ,  Joseph Maserjian

发明人： Michael G. Spencer ,  Joseph Maserjian

IPC分类号： G02B6/28 ,  G02B6/42 ,  H01L27/144 ,  H03B17/00 ,  H01J40/14

CPC分类号： H03B17/00 ,  G02B6/4295 ,  H01L27/144 ,  G02B6/2861

摘要： A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f.sub.0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of Nf.sub.0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.

摘要翻译： 亚毫米波产生集成电路包括偏置在公共电压源上的N个光导开关的阵列和与向每个开关提供不同光延迟的重复频率f0的公共光脉冲的光程差。 在一个实施例中，每个输入脉冲被应用到具有连续延迟的N个开关中的连续的一个。 N个开关以适当的开关间隔间隔开，以便在Nf0级的亚毫米波频率f的输出负载或天线辐射下产生。 优选地，光脉冲具有至少10GHz的重复率，并且N大约为100，使得电路产生大于或等于1THz的频率的辐射。

公开(公告)号：US4857976A

公开(公告)日：1989-08-15

申请号：US284832

申请日：1988-12-13

申请人： Albert W. Overhauser ,  Joseph Maserjian

发明人： Albert W. Overhauser ,  Joseph Maserjian

IPC分类号： H01L21/30 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/20

CPC分类号： H01L31/208 ,  H01L21/3003 ,  H01L31/02167 ,  H01L31/041 ,  Y02E10/50 ,  Y02P70/521

摘要： Semiconductor devices, such as silicon-base MOS devices (10) and solar cells (50), degrade as a result of a variety of reasons, such as hot carriers, photons, and ionizing radiations. Degradation in such devices is cured by the presence of atomic hydrogen. Presently, such devices are exposed to atomic hydrogen during processing. However, a source of atomic hydrogen is not available to heal damage over the lifetime of the device. In accordance with the invention, a source (34, 60) of atomic hydrogen is provided in cooperative relationship with the devices. In a preferred embodiment, the source comprises a layer of palladium, disposed at an appropriate location. The palladium is charged with atomic hydrogen during packaging or encapsulating by exposure to a hydrogen-containing species. The palladium cracks the species to generate atomic hydrogen, which it stores and provides to the device on a real-time basis.

摘要翻译： 由于诸如热载流子，光子和电离辐射的各种原因，诸如硅基MOS器件（10）和太阳能电池（50）的半导体器件降解。 这种器件的降解可以通过原子氢的存在来固化。 目前，这种装置在处理过程中暴露于原子氢。 然而，在设备的使用寿命内，原子氢源不可用来治愈损伤。 根据本发明，原子氢源（34,60）与装置协调地提供。 在优选的实施方案中，源包括设置在适当位置的钯层。 钯在通过暴露于含氢物质的包装或包封期间带有原子氢。 钯裂解物种以产生原子氢，其存储并且实时提供给器件。

公开(公告)号：US4531143A

公开(公告)日：1985-07-23

申请号：US542232

申请日：1983-10-14

申请人： Joseph Maserjian

发明人： Joseph Maserjian

IPC分类号： H01L31/113 ,  H03K17/785 ,  H01L29/78

CPC分类号： H03K17/785 ,  H01L31/1136

摘要： A metal thin oxide silicon (MTOS) optically-activated semiconductor device having respective thin, optically absorptive aluminum layers deposited over a thin oxide layer formed on a silicon substrate over a lightly doped, implant diffused region.

摘要翻译： 金属薄氧化物硅（MTOS）光学激活半导体器件具有沉积在轻掺杂的植入物扩散区上形成在硅衬底上的薄氧化物层上的相应薄的光吸收铝层。

公开(公告)号：US5325224A

公开(公告)日：1994-06-28

申请号：US028243

申请日：1993-03-09

申请人： Robert J. Lang ,  Li-Jen Cheng ,  Joseph Maserjian

发明人： Robert J. Lang ,  Li-Jen Cheng ,  Joseph Maserjian

IPC分类号： H04Q11/00 ,  H04J14/08

CPC分类号： H04Q11/0001

摘要： A time-multiplexed, optically-addressed, crossbar switch (38) is provided using a two-dimensional, optically-addressed, reflective spatial light modulator (O-SLM) (20). Since the optical addressing is time-multiplexed, only N addressing lines are required for an N.times.N crossbar, rather than the N.sup.2 lines needed in the prior art. This reduction in addressing lines makes possible the development of enormous crossbar switches, such as 100.times.100, for the first time. In addition, since data paths remain entirely in the optics domain, data speeds can reach the multi-gigabit level. In the switch, a row (40) of N inputs (42) at the "read" wavelength is spread over one axis of the O-SLM. The light is refocused along the other axis to an output array (48) of detectors (50), so that each input has the potential to talk to any one output. The O-SLM is normally off, i.e., non-reflective, so that the output is, in the absence of an input signal, zero. A one-dimensional array (52) of lasers (54) at the "write" wavelength is imaged onto the O-SLM. Each laser scans across an entire row of the O-SLM; where the laser is on, it turns on a portion of the O-SLM and establishes a connection between a particular input and a particular output. A full row is scanned in a time much shorter than the response time of the O-SLM, so that state of the O-SLM is capacitively stored and dynamically refreshed. The scanning is accomplished by tuning the wavelength of the laser and passing it through a grating, which sweeps the beam in space.

摘要翻译： 使用二维光学寻址的反射空间光调制器（O-SLM）（20）提供时间复用的光学寻址的交叉开关（38）。 由于光寻址被时分复用，所以对于N×N交叉开关仅需要N个寻址线，而不是现有技术中所需的N2线。 寻址线路的这种减少使得可能首次开发巨大的交叉开关，如100x100。 此外，由于数据路径完全保留在光学领域，因此数据速度可以达到千兆级。 在开关中，在“读取”波长处的N个输入（42）的一行（40）分布在O-SLM的一个轴上。 沿着另一轴将光重新聚焦到检测器（50）的输出阵列（48），使得每个输入具有与任何一个输出通信的潜力。 O-SLM通常关闭，即不反射，使得输出在没有输入信号的情况下为零。 在“写入”波长处的激光器（54）的一维阵列（52）被成像到O-SLM上。 每个激光扫描O-SLM的整行; 在激光器打开的地方，它打开O-SLM的一部分，并建立特定输入和特定输出之间的连接。 在比O-SLM的响应时间短得多的时间内扫描完整行，使得O-SLM的状态被电容性地存储和动态刷新。 扫描通过调整激光器的波长并将其通过光栅来实现，该光栅在空间中扫描光束。

公开(公告)号：US4908686A

公开(公告)日：1990-03-13

申请号：US226754

申请日：1988-08-01

申请人： Joseph Maserjian

发明人： Joseph Maserjian

IPC分类号： H01L27/146 ,  H01L31/101 ,  H01L31/108

CPC分类号： H01L31/101 ,  H01L27/1465 ,  H01L31/108

摘要： The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

摘要翻译： 使用与外延生长的薄硅化物（10）和栅极的选择性掺杂（22）结合的堆叠肖特基势垒（16）提供了与现有的硅VLSI技术兼容的较长波长的高量子效率红外检测器（30）。

公开(公告)号：US4903101A

公开(公告)日：1990-02-20

申请号：US174111

申请日：1988-03-28

申请人： Joseph Maserjian

发明人： Joseph Maserjian

IPC分类号： H01L27/146 ,  H01L31/0352

CPC分类号： B82Y20/00 ,  H01L27/14649 ,  H01L31/035236

摘要： A novel infrared detector (20, 20', 20"), is provided, which is characterized by photon-assisted resonant tunneling between adjacent quantum wells (22a, 22b) separated by barrier layers (28) in an intrinsic semiconductor layer (24) formed on an n.sup.+ substrate (26), wherein the resonance is electrically tunable over a wide band of wavelengths in the near to long infrared region. An n.sup.+ contacting layer (34) is formed over the intrinsic layer and the substrate is n.sup.+ doped to provide contact to the quantum wells. The detector permits fabrication of arrays (30) (one-dimensional and two-dimensional) for use in imaging and spectroscopy applications.

摘要翻译： 提供了一种新颖的红外检测器（20,20'，20“），其特征在于在本征半导体层（24）中由阻挡层（28）分隔的相邻量子阱（22a，22b）之间的光子辅助谐振隧穿 ）形成在n +衬底（26）上，其中所述谐振在近红外区域中在宽波长波段上是电可调谐的。 在本征层上形成n +接触层（34），并且衬底被n +掺杂以提供与量子阱的接触。 检测器允许制造用于成像和光谱应用的阵列（30）（一维和二维）。

公开(公告)号：US4818079A

公开(公告)日：1989-04-04

申请号：US149653

申请日：1987-01-28

申请人： Joseph Maserjian

发明人： Joseph Maserjian

IPC分类号： G02F1/017 ,  H01L31/0352 ,  G02F1/19 ,  G02F1/21

CPC分类号： B82Y20/00 ,  G02F1/01716 ,  H01L31/035236

摘要： Multiple quantum well (MQW) structures (24) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10, 10'). Several embodiments are provided, including combination of MQW structures with PIN photodiodes of GaAs (12) or Si (12') to form two-dimensional arrays of pixel elements (92) on a single chip (90). In another embodiment, the optically-addressed SLM (50) comprises a vertical stack of MQW layers (52) within the penetration depth of an optical write signal (36), a plurality of space charge barriers (52b) having predetermined tunneling times by control of doping and thickness, whereby modulation sensitivity is high and no external voltage source is required. In yet another embodiment, the optically-addressed SLM (70) comprises a multiplicity of quarter-wave layers (72, 74) whose index of refraction is changed by changes in in the fields at the boundaries (80) responsive to the photocurrent generated by the incident write signal. The changes are read by use of a read signal (38) of a wavelength that is resonantly reflected (78) from the quarter-wave layers.

摘要翻译： 多量子阱（MQW）结构（24）被用于提供实时，可靠，高性能的光寻址空间光调制器（SLM）（10,10'）。 提供了几个实施例，包括MQW结构与GaAs（12）或Si（12'）的PIN光电二极管的组合，以在单个芯片（90）上形成像素元件（92）的二维阵列。 在另一个实施例中，光学寻址的SLM（50）包括在光学写入信号（36）的穿透深度内的MQW层（52）的垂直堆叠，多个具有预定隧道时间的空间电荷势垒（52b），通过控制 的掺杂和厚度，由此调制灵敏度高并且不需要外部电压源。 在另一个实施例中，光学寻址的SLM（70）包括多个四分之一波长层（72,74），其折射率响应于由边界（80）产生的光电流在边界（80）处的场中的变化而改变， 事件写信号。 通过使用从四分之一波长层共振反射（78）的波长的读取信号（38）来读取变化。