发明授权
- 专利标题： Method for manufacturing a field effect transistor
- 专利标题（中）： 场效应晶体管的制造方法
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申请号： US778986申请日： 1991-11-12
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公开(公告)号： US5281547A公开(公告)日： 1994-01-25
- 发明人: Akira Uchiyama , Takahisa Hayashi , Toshiyuki Ochiai
- 申请人： Akira Uchiyama , Takahisa Hayashi , Toshiyuki Ochiai
- 申请人地址： JPX Tokyo
- 专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人： Oki Electric Industry Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX1-118893 19890512
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/092 ; H01L29/08 ; H01L29/423 ; H01L21/265
摘要：
A field effect transistor of the present invention has in a base layer (33) a difference in levels constituted by an upper main surface (35a) a wall surface (35b) and a lower main surface (35c), the wall surface (35b) having a gate insulating film (39) and a gate electrode (41) in a sequential order at least in a direction extending from the upper main surface (35a) to the lower main surface (35c), the wall surface (35b) being provided, on both sides of the portions thereof corresponding to the gate insulating film (39) and gate electrode (41), with inpurity diffusion regions for forming of source and drain, respectively.Accordingly, the gate electrode (41) is provided in a manner that the gate width which needs to have a relatively large size is set in a direction vertical to the upper main surface of the base layer. This makes it possible to improve the degree of integration effectively.
公开/授权文献
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