发明授权
- 专利标题： Method of forming silicon-based thin film and method of manufacturing thin film transistor using silicon-based thin film
- 专利标题（中）： 硅基薄膜的形成方法及使用硅系薄膜制造薄膜晶体管的方法
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申请号： US690816申请日： 1991-04-23
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公开(公告)号： US5284789A公开(公告)日： 1994-02-08
- 发明人: Hisatoshi Mori , Syunichi Sato , Naohiro Konya
- 申请人： Hisatoshi Mori , Syunichi Sato , Naohiro Konya
- 申请人地址： JPX Tokyo
- 专利权人： Casio Computer Co., Ltd.
- 当前专利权人： Casio Computer Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-107376 19900425; JPX2-107377 19900425; JPX2-235675 19900907; JPX2-239940 19900912; JPX2-239941 19900912; JPX2-242576 19900914; JPX2-242577 19900914
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/318 ; H01L21/336 ; H01L21/84 ; H01L21/00 ; H01L21/02 ; H01L21/326
摘要：
Method of forming a thin film consisting of a silicon-based material includes a first step of setting a substrate subjected to formation of a thin insulating film consisting of the silicon-based material in a chamber having high-frequency electrodes for receiving a high-frequency power while the substrate is kept heated at a predetermined temperature, a second step of supplying a process gas to the chamber, a third step of applying a high-frequency power to the high-frequency electrodes to generate a plasma, a fourth step of depositing an insulator consisting of the silicon-based material on the substrate to a predetermined thickness while gas supply in the second step and supply of the high-frequency power in the third step are kept maintained, and a fifth step of cooling the substrate on which the insulating film is formed and unloading the substrate from the chamber. In the fourth step, the substrate is kept heated within the temperature range of 230.degree. C. to 270.degree. C., and the high-frequency power is controlled to be supplied so that an RF discharge power density falls within the range of 60 to 100 mW/cm.sup.2.
公开/授权文献
- US5574471A Electromagnetic energy shield 公开/授权日：1996-11-12
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