发明授权
US5286681A Method for manufacturing semiconductor device having a self-planarizing
film
失效
具有自平坦化膜的半导体器件的制造方法
- 专利标题: Method for manufacturing semiconductor device having a self-planarizing film
- 专利标题(中): 具有自平坦化膜的半导体器件的制造方法
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申请号: US901329申请日: 1992-06-19
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公开(公告)号: US5286681A公开(公告)日: 1994-02-15
- 发明人: Kazuo Maeda , Bunya Matsui , Yuko Nishimoto
- 申请人: Kazuo Maeda , Bunya Matsui , Yuko Nishimoto
- 申请人地址: JPX Tokyo
- 专利权人: Canon Sales Co., Inc.
- 当前专利权人: Canon Sales Co., Inc.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-149013 19910620
- 主分类号: H01L21/3105
- IPC分类号: H01L21/3105 ; H01L21/316 ; H01L21/3205 ; H01L21/768 ; H01L21/02
摘要:
The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a film used for flattening a substrate surface having unevenness in a manufacturing process of a semiconductor device, and has for its object to provide a method of manufacturing a semiconductor device for making it possible to flatten a film by processing at a lower temperature without deteriorating the film quality.The present invention is structured including a process of depositing a film composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO.sub.2 film or depositing a film composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO.sub.2 film on the film, and a process of melting and fluidizing these films so as to flatten them by applying heat treatment.