发明授权
- 专利标题： Silicon nitride thin films with improved properties
- 专利标题（中）： 具有改善性能的氮化硅薄膜
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申请号： US795383申请日： 1991-11-21
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公开(公告)号： US5288527A公开(公告)日： 1994-02-22
- 发明人: Didier Jousse , Pablo Vilato , Jean-Claude Bruyere , Brigette Reynes
- 申请人： Didier Jousse , Pablo Vilato , Jean-Claude Bruyere , Brigette Reynes
- 申请人地址： FRX Aubervilliers Cedex
- 专利权人： Saint Gobain Vitrage International c/o Saint Gobain Recherche
- 当前专利权人： Saint Gobain Vitrage International c/o Saint Gobain Recherche
- 当前专利权人地址： FRX Aubervilliers Cedex
- 主分类号： C03C17/22
- IPC分类号： C03C17/22 ; C23C16/34 ; B05D3/06 ; B05D5/12
摘要：
A method for preparing silicon nitride films with improved properties and characterized by a limited concentration of hydrogen atoms, a high index of refraction, resistance to attack by a hydrofluoric solution, prevention of diffusion of alkalines and oxygen, and good dielectric properties such as optical gap. The process of preparation uses plasma CVD with ammonia. The invention can be applicable to flat screens, TFT transistors and functional glazings.
公开/授权文献
- US5859412A Microwave and far infrared drying under reduced pressure 公开/授权日：1999-01-12
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