发明授权
- 专利标题: Non-volatile IC memory
- 专利标题(中): 非易失性IC存储器
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申请号: US943559申请日: 1992-09-11
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公开(公告)号: US5305276A公开(公告)日: 1994-04-19
- 发明人: Hiromi Uenoyama
- 申请人: Hiromi Uenoyama
- 申请人地址: JPX Kyoto
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JPX Kyoto
- 优先权: JPX3-259605 19910911
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C11/00 ; G11C16/02 ; G11C16/10 ; G11C8/00 ; G11C7/00
摘要:
A non-volatile IC memory comprising in addition to a PROM region divided into blocks a RAM region having a capacity corresponding to one of the blocks wherein the entire data stored in the corresponding block in the PROM region designated by an address sent out from the outside is transferred to the RAM region. After data in the corresponding portion in the RAM region designated by the address is rewritten by data sent out from the outside, the data in the RAM region is written back in the corresponding block of the PROM, thereby data is rewritten by a word unit or a bit unit.
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