发明授权
- 专利标题： Method of forming a nonvolatile stacked memory
- 专利标题（中）： 形成非易失性堆叠存储器的方法
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申请号： US900225申请日： 1992-06-17
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公开(公告)号： US5306935A公开(公告)日： 1994-04-26
- 发明人: Agerico L. Esquivel , Allan T. Mitchell
- 申请人： Agerico L. Esquivel , Allan T. Mitchell
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L21/8247 ; H01L27/06 ; H01L27/115 ; H01L29/788
摘要：
A nonvolatile memory array has two or more stacked layers of memory cells (10). The bottom layer may comprise a planar, X-cell, or buried N++ FAMOS transistor array and the top layer preferably comprises a planar transistor array. An epitaxial silicon layer (36) provides the substrate for the second layer. The stacked layer structure allows a two-fold increase in memory density without scaling the device sizes.
公开/授权文献
- US5942034A Apparatus for the gelatin coating of medicaments 公开/授权日：1999-08-24
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