发明授权
- 专利标题: Contact via for semiconductor device
- 专利标题(中): 半导体器件接触通孔
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申请号: US29509申请日: 1993-03-11
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公开(公告)号: US5317193A公开(公告)日: 1994-05-31
- 发明人: Shinya Watanabe
- 申请人: Shinya Watanabe
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX4-114945 19920507
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/28 ; H01L21/3065 ; H01L21/311 ; H01L21/768 ; H01L21/8242 ; H01L23/485 ; H01L23/522 ; H01L23/48 ; H01L29/40
摘要:
The etching selectivity is controlled by appropriately changing the dimension of the opening of each contact holes in forming simultaneously a plurality of contact holes of different depth by etching. By forming a dent in advance underlying the region where a contact hole is to be formed, the depth of the contact hole can be increased, whereby difference in the depths of the plurality of contact holes can be reduced. As a result, damage in the underlying layer or under etching in forming a plurality of contact holes of different depth simultaneously by etching can be solved.
公开/授权文献
- US4749544A Thin walled channel 公开/授权日:1988-06-07
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