发明授权
US5321712A Semiconductor light-emitting device having a cladding layer composed of
an InGaAlp-based compound
失效
具有由InGaAlp系化合物构成的包覆层的半导体发光元件
- 专利标题： Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound
- 专利标题（中）： 具有由InGaAlp系化合物构成的包覆层的半导体发光元件
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申请号： US10844申请日： 1993-01-29
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公开(公告)号： US5321712A公开(公告)日： 1994-06-14
- 发明人: Kazuhiko Itaya , Koichi Nitta , Genichi Hatakoshi , Yukie Nishikawa , Hideto Sugawara , Mariko Suzuki
- 申请人： Kazuhiko Itaya , Koichi Nitta , Genichi Hatakoshi , Yukie Nishikawa , Hideto Sugawara , Mariko Suzuki
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-16932 19920131
- 主分类号： H01L33/12
- IPC分类号： H01L33/12 ; H01L33/14 ; H01L33/30 ; H01S5/00 ; H01S5/042 ; H01S5/223 ; H01S5/30 ; H01S5/32 ; H01S5/323 ; H01S3/19
摘要：
A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.
公开/授权文献
- USD361860S Table lamp base 公开/授权日：1995-08-29