发明授权
- 专利标题： Heterojunction bipolar transistor
- 专利标题（中）： 异质结双极晶体管
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申请号： US51617申请日： 1993-04-23
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公开(公告)号： US5332912A公开(公告)日： 1994-07-26
- 发明人: Tetsuro Nozu , Norio Iizuka , Junko Akagi , Torakiti Kobayashi , Masao Obara
- 申请人： Tetsuro Nozu , Norio Iizuka , Junko Akagi , Torakiti Kobayashi , Masao Obara
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-106763 19920424
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/331 ; H01L29/73 ; H01L29/737 ; H01L29/61
摘要：
A heterojunction bipolar transistor comprises n.sup.+ -type GaAs collector contact region, an n-type GaAs collector region, a p.sup.+ -type GaAs base region, an n-type AlGaAs emitter region, and an n.sup.+ -type InGaAs emitter contact region, all of which are formed on a semiinsulative GaAs substrate. A heterojunction is formed by the base region and the emitter region. The emitter region is formed in mesa shape by dry etching. Around this mesa, B.sup.+ ion-implanted high-resistance region is formed. The base-emitter Junction is isolated from the ion-implanted region. The heterojunction bipolar transistor therefore has little on-voltage changes.
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