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公开(公告)号:US5898909A
公开(公告)日:1999-04-27
申请号:US720379
申请日:1996-09-27
申请人: Kunio Yoshihara , Kouhei Morizuka , Mitsuo Konno , Yasuo Ashizawa , Junko Akagi , Yasuhiro Kuriyama , Motoyasu Morinaga , Eiji Takagi , Yasushi Shizuki , Yuji Iseki , Takeshi Hanawa , Takeshi Miyagi
发明人: Kunio Yoshihara , Kouhei Morizuka , Mitsuo Konno , Yasuo Ashizawa , Junko Akagi , Yasuhiro Kuriyama , Motoyasu Morinaga , Eiji Takagi , Yasushi Shizuki , Yuji Iseki , Takeshi Hanawa , Takeshi Miyagi
IPC分类号: H01L25/00 , H01L23/552 , H01L25/065 , H01L25/07 , H01L25/18 , H01P5/08 , H01P7/06 , H01P7/10 , H01Q23/00 , H03D7/00 , H04B1/38 , H04B1/44
CPC分类号: H03D7/00 , H01L23/552 , H01Q23/00 , H04B1/408 , H01L2223/6677 , H01L2224/05554 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/27013 , H01L2224/32225 , H01L2224/32245 , H01L2224/48137 , H01L2224/48227 , H01L2224/4823 , H01L2224/49175 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2924/00014 , H01L2924/01057 , H01L2924/01079 , H01L2924/10329 , H01L2924/14 , H01L2924/15153 , H01L2924/15159 , H01L2924/15165 , H01L2924/16152 , H01L2924/1616 , H01L2924/16195 , H01L2924/16251 , H01L2924/19041 , H01L2924/19104 , H01L2924/19105 , H01L2924/19107 , H01L2924/3025
摘要: Disclosed is an ultra high frequency radio communication apparatus having: a receiver antenna; a transmitter antenna; an IC chip being electrically connected to the receiver antenna and the transmitter antenna; a substrate on which the receiver antenna, the transmitter antenna and the IC chip are mounted; an input terminal for inputting to the IC chip a base band input signal; an output terminal for outputting a base band output signal from the IC chip; and a control signal terminal for inputting a control signal for controlling the IC chip to the IC chip. The IC chip is placed in a shielding space such that the cut-off frequency of the shielding space is higher than the frequency of a carrier signal for radio communication.
摘要翻译: 公开了一种超高频无线通信装置,具有:接收天线; 发射天线; IC芯片电连接到接收机天线和发射机天线; 其上安装有接收天线,发射机天线和IC芯片的基板; 输入端子,用于向IC芯片输入基带输入信号; 输出端子,用于从IC芯片输出基带输出信号; 以及用于输入用于将IC芯片控制到IC芯片的控制信号的控制信号端子。 IC芯片被放置在屏蔽空间中,使得屏蔽空间的截止频率高于用于无线电通信的载波信号的频率。
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公开(公告)号:US4370180A
公开(公告)日:1983-01-25
申请号:US213099
申请日:1980-12-04
申请人: Makoto Azuma , Junko Akagi
发明人: Makoto Azuma , Junko Akagi
IPC分类号: H01L21/22 , H01L21/225 , H01L29/167 , H01L29/744
CPC分类号: H01L29/167 , H01L21/221 , H01L21/2255 , H01L29/66363 , H01L29/744 , Y10S438/904
摘要: A method for manufacturing power switching devices such as thyristors and power transistors comprising the steps of forming impurity diffused layers of one conductivity type and of the opposite conductivity type in a semiconductor substrate of one conductivity type; forming a film containing phosphorus on the substrate; diffusing lifetime killer atoms into the substrate; and forming electrodes on the substrate.
摘要翻译: 一种用于制造诸如晶闸管和功率晶体管的功率开关器件的方法,包括以下步骤:在一种导电类型的半导体衬底中形成一种导电类型和相反导电类型的杂质扩散层; 在基材上形成含磷的膜; 将终身杀伤原子扩散到基底中; 以及在基板上形成电极。
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公开(公告)号:US5332912A
公开(公告)日:1994-07-26
申请号:US51617
申请日:1993-04-23
申请人: Tetsuro Nozu , Norio Iizuka , Junko Akagi , Torakiti Kobayashi , Masao Obara
发明人: Tetsuro Nozu , Norio Iizuka , Junko Akagi , Torakiti Kobayashi , Masao Obara
IPC分类号: H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737 , H01L29/61
CPC分类号: H01L29/7371
摘要: A heterojunction bipolar transistor comprises n.sup.+ -type GaAs collector contact region, an n-type GaAs collector region, a p.sup.+ -type GaAs base region, an n-type AlGaAs emitter region, and an n.sup.+ -type InGaAs emitter contact region, all of which are formed on a semiinsulative GaAs substrate. A heterojunction is formed by the base region and the emitter region. The emitter region is formed in mesa shape by dry etching. Around this mesa, B.sup.+ ion-implanted high-resistance region is formed. The base-emitter Junction is isolated from the ion-implanted region. The heterojunction bipolar transistor therefore has little on-voltage changes.
摘要翻译: 异质结双极晶体管包括n +型GaAs集电极接触区域,n型GaAs集电极区域,p +型GaAs基极区域,n型AlGaAs发射极区域和n +型InGaAs发射极接触区域,所有这些 形成在半绝缘GaAs衬底上。 由基极区域和发射极区域形成异质结。 发射极区域通过干蚀刻形成为台面形状。 围绕该台面形成B +离子注入高电阻区域。 基极 - 发射极结与离子注入区隔离。 因此异质结双极晶体管具有很小的导通电压变化。
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4.
公开(公告)号:US4839612A
公开(公告)日:1989-06-13
申请号:US167108
申请日:1988-03-11
申请人: Junko Akagi
发明人: Junko Akagi
IPC分类号: H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737 , H03F3/19 , H03F3/20 , H03F3/21
CPC分类号: H03F3/19
摘要: A class C power amplifier has a heterojunction bipolar transistor as an element for amplifying an input signal. A d.c. bias voltage source, such as a d.c. battery, is connected to the transistor, such that a d.c. bias voltage lower than the turn-on voltage of the transistor is applied between the base and emitter of the bipolar transistor. An inductance coil is connected in series between the emitter of the transistor and the d.c. bias voltage source. Since the d.c. bias voltage is applied to the heterojunction bipolar transistor, the external drive voltage for activating the transistor is reduced to increase the high-frequency power gain of the amplifier.
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公开(公告)号:US4739379A
公开(公告)日:1988-04-19
申请号:US878661
申请日:1986-06-26
申请人: Junko Akagi , Jiro Yoshida , Makoto Azuma
发明人: Junko Akagi , Jiro Yoshida , Makoto Azuma
IPC分类号: H01L29/205 , H01L21/331 , H01L21/8222 , H01L27/06 , H01L27/082 , H01L29/20 , H01L29/73 , H01L29/737 , H01L29/72
CPC分类号: H01L29/7371 , H01L27/0605
摘要: A heterojunction bipolar integrated circuit is disclosed which uses a heterojunction bipolar transistor with a heterojunction between an emitter region and a base region. In this transistor, a pn junction between the base region and the emitter region has a greater area than a pn junction between the base region and a collector region. A plurality of such heterojunction bipolar transistors are isolated on a substrate to perform logic operations in an unsaturated region.
摘要翻译: 公开了一种异质结双极集成电路,其使用在发射极区域和基极区域之间具有异质结的异质结双极晶体管。 在该晶体管中,基极区域和发射极区域之间的pn结具有比基极区域和集电极区域之间的pn结更大的面积。 多个这样的异质结双极晶体管被隔离在衬底上以在不饱和区域中执行逻辑操作。
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