Method for manufacturing power switching devices
    2.
    发明授权
    Method for manufacturing power switching devices 失效
    电源开关装置的制造方法

    公开(公告)号:US4370180A

    公开(公告)日:1983-01-25

    申请号:US213099

    申请日:1980-12-04

    摘要: A method for manufacturing power switching devices such as thyristors and power transistors comprising the steps of forming impurity diffused layers of one conductivity type and of the opposite conductivity type in a semiconductor substrate of one conductivity type; forming a film containing phosphorus on the substrate; diffusing lifetime killer atoms into the substrate; and forming electrodes on the substrate.

    摘要翻译: 一种用于制造诸如晶闸管和功率晶体管的功率开关器件的方法,包括以下步骤:在一种导电类型的半导体衬底中形成一种导电类型和相反导电类型的杂质扩散层; 在基材上形成含磷的膜; 将终身杀伤原子扩散到基底中; 以及在基板上形成电极。

    Heterojunction bipolar transistor
    3.
    发明授权
    Heterojunction bipolar transistor 失效
    异质结双极晶体管

    公开(公告)号:US5332912A

    公开(公告)日:1994-07-26

    申请号:US51617

    申请日:1993-04-23

    CPC分类号: H01L29/7371

    摘要: A heterojunction bipolar transistor comprises n.sup.+ -type GaAs collector contact region, an n-type GaAs collector region, a p.sup.+ -type GaAs base region, an n-type AlGaAs emitter region, and an n.sup.+ -type InGaAs emitter contact region, all of which are formed on a semiinsulative GaAs substrate. A heterojunction is formed by the base region and the emitter region. The emitter region is formed in mesa shape by dry etching. Around this mesa, B.sup.+ ion-implanted high-resistance region is formed. The base-emitter Junction is isolated from the ion-implanted region. The heterojunction bipolar transistor therefore has little on-voltage changes.

    摘要翻译: 异质结双极晶体管包括n +型GaAs集电极接触区域,n型GaAs集电极区域,p +型GaAs基极区域,n型AlGaAs发射极区域和n +型InGaAs发射极接触区域,所有这些 形成在半绝缘GaAs衬底上。 由基极区域和发射极区域形成异质结。 发射极区域通过干蚀刻形成为台面形状。 围绕该台面形成B +离子注入高电阻区域。 基极 - 发射极结与离子注入区隔离。 因此异质结双极晶体管具有很小的导通电压变化。

    High-frequency power amplifier having heterojunction bipolar transistor
    4.
    发明授权
    High-frequency power amplifier having heterojunction bipolar transistor 失效
    具有异质结双极晶体管的高频功率放大器

    公开(公告)号:US4839612A

    公开(公告)日:1989-06-13

    申请号:US167108

    申请日:1988-03-11

    申请人: Junko Akagi

    发明人: Junko Akagi

    CPC分类号: H03F3/19

    摘要: A class C power amplifier has a heterojunction bipolar transistor as an element for amplifying an input signal. A d.c. bias voltage source, such as a d.c. battery, is connected to the transistor, such that a d.c. bias voltage lower than the turn-on voltage of the transistor is applied between the base and emitter of the bipolar transistor. An inductance coil is connected in series between the emitter of the transistor and the d.c. bias voltage source. Since the d.c. bias voltage is applied to the heterojunction bipolar transistor, the external drive voltage for activating the transistor is reduced to increase the high-frequency power gain of the amplifier.

    Heterojunction bipolar integrated circuit
    5.
    发明授权
    Heterojunction bipolar integrated circuit 失效
    异质结双极集成电路

    公开(公告)号:US4739379A

    公开(公告)日:1988-04-19

    申请号:US878661

    申请日:1986-06-26

    CPC分类号: H01L29/7371 H01L27/0605

    摘要: A heterojunction bipolar integrated circuit is disclosed which uses a heterojunction bipolar transistor with a heterojunction between an emitter region and a base region. In this transistor, a pn junction between the base region and the emitter region has a greater area than a pn junction between the base region and a collector region. A plurality of such heterojunction bipolar transistors are isolated on a substrate to perform logic operations in an unsaturated region.

    摘要翻译: 公开了一种异质结双极集成电路,其使用在发射极区域和基极区域之间具有异质结的异质结双极晶体管。 在该晶体管中,基极区域和发射极区域之间的pn结具有比基极区域和集电极区域之间的pn结更大的面积。 多个这样的异质结双极晶体管被隔离在衬底上以在不饱和区域中执行逻辑操作。