发明授权
- 专利标题: Blue light-emitting diode with degenerate junction structure
- 专利标题(中): 具有退化结结构的蓝色发光二极管
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申请号: US125284申请日: 1993-09-22
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公开(公告)号: US5338944A公开(公告)日: 1994-08-16
- 发明人: John A. Edmond , Hua-Shuang Kong , Vladimir Dmitriev , Gary E. Bulman
- 申请人: John A. Edmond , Hua-Shuang Kong , Vladimir Dmitriev , Gary E. Bulman
- 申请人地址: NC Durham
- 专利权人: Cree Research, Inc.
- 当前专利权人: Cree Research, Inc.
- 当前专利权人地址: NC Durham
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/34
摘要:
A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.
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