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46 条记录 (耗时 0.028 秒)

    Blue light-emitting diode with degenerate junction structure
    1.
    发明授权
    Blue light-emitting diode with degenerate junction structure 失效
    具有退化结结构的蓝色发光二极管

    公开(公告)号：US5338944A

    公开(公告)日：1994-08-16

    申请号：US125284

    申请日：1993-09-22

    申请人： John A. Edmond ,  Hua-Shuang Kong ,  Vladimir Dmitriev ,  Gary E. Bulman

    发明人： John A. Edmond ,  Hua-Shuang Kong ,  Vladimir Dmitriev ,  Gary E. Bulman

    IPC分类号： H01L33/00 ,  H01L33/34

    CPC分类号： H01L33/34 ,  H01L33/0008 ,  H01S5/3095

    摘要： A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.

    摘要翻译： 公开了一种以增加的亮度和效率在可见光谱的蓝色区域中发光的发光二极管。 发光二极管包括n型碳化硅衬底; n型碳化硅顶层; 以及n型衬底和n型顶层之间的发光p-n结结构。 p-n结结构由n型碳化硅和p型碳化硅的各部分形成。 二极管还包括在n型顶层和n型衬底之间的装置，用于将n型顶层耦合到发光pn结结构，同时防止n型顶层，p型 接合结构中的层，以及n型衬底。

    Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
    2.
    发明授权
    Vertical geometry light emitting diode with group III nitride active layer and extended lifetime 失效
    具有III族氮化物活性层的垂直几何型发光二极管和延长的使用寿命

    公开(公告)号：US5523589A

    公开(公告)日：1996-06-04

    申请号：US309251

    申请日：1994-09-20

    申请人： John A. Edmond ,  Gary E. Bulman ,  Hua-Shuang Kong ,  Vladimir Dmitriev

    发明人： John A. Edmond ,  Gary E. Bulman ,  Hua-Shuang Kong ,  Vladimir Dmitriev

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L31/0312

    CPC分类号： H01L33/32 ,  H01L33/007

    摘要： A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

    摘要翻译： 发光二极管发射在可见光谱的蓝色部分，其特征在于延长的使用寿命。 发光二极管包括导电碳化硅衬底; 与碳化硅衬底的欧姆接触; 选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物的导电缓冲层，其中A和B是III族元素，其中x为零， 或零和1之间的分数，以及碳化硅与这种三元III族氮化物的合金; 以及包括在缓冲层上的p-n结的双异质结构，其中活性和异质结构层选自二元III族氮化物和三元III族氮化物。

    Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
    3.
    发明授权
    Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices 失效
    碳化硅和氮化镓之间的缓冲结构以及所得的半导体器件

    公开(公告)号：US5393993A

    公开(公告)日：1995-02-28

    申请号：US166229

    申请日：1993-12-13

    申请人： John A. Edmond ,  Vladimir Dmitriev ,  Kenneth Irvine

    发明人： John A. Edmond ,  Vladimir Dmitriev ,  Kenneth Irvine

    IPC分类号： H01L21/205 ,  H01L33/00

    CPC分类号： H01L33/007

    摘要： A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide and a layer of single crystal gallium nitride. The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride, and a second layer of gallium nitride and aluminum nitride adjacent to the first layer. The mole percentage of aluminum nitride in the second layer is substantially different from the mole percentage of aluminum nitride in the first layer. A layer of single crystal gallium nitride is formed upon the second layer of gallium nitride. In preferred embodiments, the buffer further comprises an epitaxial layer of aluminum nitride upon a silicon carbide substrate.

    摘要翻译： 公开了一种过渡晶体结构，用于在单晶碳化硅层和单晶氮化镓层之间提供良好的晶格和热匹配。 过渡结构包括由第一氮化镓层和氮化铝构成的缓冲层，以及与第一层相邻的第二氮化镓层和氮化铝层。 第二层中的氮化铝的摩尔百分数与第一层中氮化铝的摩尔百分比基本上不同。 在第二层氮化镓上形成一层单晶氮化镓。 在优选实施例中，缓冲器还包括在碳化硅衬底上的氮化铝外延层。

    METHOD AND APPARATUS FOR LOCALLY DEFORMING AN OPTICAL ELEMENT FOR PHOTOLITHOGRAPHY
    4.
    发明申请
    METHOD AND APPARATUS FOR LOCALLY DEFORMING AN OPTICAL ELEMENT FOR PHOTOLITHOGRAPHY 有权
    用于局部变形光刻元件的方法和装置

    公开(公告)号：US20150085269A1

    公开(公告)日：2015-03-26

    申请号：US14238803

    申请日：2012-08-21

    申请人： Vladimir Dmitriev ,  Uri Stern

    发明人： Vladimir Dmitriev ,  Uri Stern

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70191 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/60 ,  G03F1/72 ,  G03F7/0002 ,  G03F7/70025

    摘要： The invention relates to a method for locally deforming an optical element for photolithography in accordance with a predefined deformation form comprising: (a) generating at least one laser pulse having at least one laser beam parameter; and (b) directing the at least one laser pulse onto the optical element, wherein the at least one laser beam parameter of the laser pulse is selected to yield the predefined deformation form.

    摘要翻译： 本发明涉及一种用于根据预定变形形式局部变形用于光刻的光学元件的方法，包括：（a）产生至少一个具有至少一个激光束参数的激光脉冲; 和（b）将所述至少一个激光脉冲引导到所述光学元件上，其中所述激光脉冲的所述至少一个激光束参数被选择以产生所述预定变形形式。

    METHOD AND APPARATUS FOR CORRECTING ERRORS OF A PHOTOLITHOGRAPHIC MASK
    5.
    发明申请
    METHOD AND APPARATUS FOR CORRECTING ERRORS OF A PHOTOLITHOGRAPHIC MASK 有权
    用于校正光刻掩模误差的方法和装置

    公开(公告)号：US20120009511A1

    公开(公告)日：2012-01-12

    申请号：US13179799

    申请日：2011-07-11

    申请人： Vladimir Dmitriev

    发明人： Vladimir Dmitriev

    IPC分类号： G03F1/00 ,  B29C35/08

    CPC分类号： G03F1/72 ,  G03F1/84 ,  G03F7/70466 ,  G03F7/70625

    摘要： A method for correcting a plurality of errors of a photolithographic mask, comprising optimizing first parameters of a imaging transformation of the photolithographic mask and second parameters of a laser beam locally directed onto the photolithographic mask, and correcting the plurality of errors by applying an imaging transformation using optimized first parameters and locally directing the laser beam onto the photolithographic mask using optimized second parameters, wherein the first and the second parameters are simultaneously optimized in a joint optimization process.

    摘要翻译： 一种用于校正光刻掩模的多个误差的方法，包括优化光刻掩模的成像变换的第一参数和局部定向到光刻掩模上的激光束的第二参数，以及通过应用成像变换来校正多个误差 使用优化的第一参数并且使用优化的第二参数将激光束局部地引导到光刻掩模上，其中在联合优化过程中同时优化第一和第二参数。

    Apparatus for electromagnetic forming with durability and efficiency enhancements
    7.
    发明授权
    Apparatus for electromagnetic forming with durability and efficiency enhancements 有权
    具有耐久性和效率提高的电磁成形装置

    公开(公告)号：US07540180B2

    公开(公告)日：2009-06-02

    申请号：US10967978

    申请日：2004-10-19

    申请人： Sergey Golovashchenko ,  Vladimir Dmitriev ,  Patrick Canfield ,  Albert Krause ,  Clay Maranville

    发明人： Sergey Golovashchenko ,  Vladimir Dmitriev ,  Patrick Canfield ,  Albert Krause ,  Clay Maranville

    IPC分类号： B21J15/24

    CPC分类号： B21D26/14

    摘要： There is disclosed herein an apparatus for electromagnetic forming of a workpiece with enhancements that increase the durability and overall efficiency of the solenoid coil. The apparatus includes reinforcement members dispersed through the solenoid coil and a cooling system. The apparatus also includes a shaper that varies in girth effectively acting as a force concentrator. The electromagnetic forming device is also capable of incrementally heat treating the workpiece and reducing residual stresses in the workpiece. The invention further discloses a more efficient way of manufacturing the solenoid coil.

    摘要翻译： 这里公开了一种用于电磁成形工件的装置，其具有提高螺线管线圈的耐久性和总体效率的增强。 该装置包括通过螺线管线圈分散的加强构件和冷却系统。 该装置还包括成形器，该成形器围绕有效地作为力集中器而变化。 电磁成形装置还能够对工件进行增量热处理并减少工件中的残余应力。 本发明还公开了一种更有效的制造螺线管线圈的方法。

    Method for achieving low defect density AlGaN single crystal boules
    8.
    发明申请
    Method for achieving low defect density AlGaN single crystal boules 有权
    实现低缺陷密度AlGaN单晶晶粒的方法

    公开(公告)号：US20050212001A1

    公开(公告)日：2005-09-29

    申请号：US11134200

    申请日：2005-05-20

    申请人： Yuri Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir Dmitriev

    发明人： Yuri Melnik ,  Vitali Soukhoveev ,  Vladimir Ivantsov ,  Katie Tsvetkov ,  Vladimir Dmitriev

    IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B25/00 ,  C30B29/40 ,  H01L21/205 ,  H01L33/00

    CPC分类号： C30B25/00 ,  C30B11/00 ,  C30B11/14 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262

    摘要： A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality.

    摘要翻译： 提供了一种用于生长体GaN和AlGaN单晶晶粒的方法，优选使用改进的HVPE工艺。 单晶晶粒通常具有超过4立方厘米的体积，最小尺寸约为1厘米。 如果需要，可以在生长期间掺杂大块材料以实现n，i-或p型导电性。 为了具有足够的持续时间的生长周期，优选使用延伸的Ga源，其中Ga源的一部分保持在相对高的温度，而大部分Ga源保持在接近于刚刚高于 Ga的熔化温度为了生长AlGaN的大块，优选使用多个Al源，Al源被依次激活以避免Al源耗尽和过度降解。 为了实现高生长速率，优选使用双重生长区反应器，其中第一高温区用于晶体成核，第二低温区用于快速晶体生长。 虽然该方法可以用于生长其中生长材料和晶种具有不同组成的晶体，但优选两个晶体结构具有相同的组成，从而产生改善的晶体质量。