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公开(公告)号：US5338944A
公开(公告)日：1994-08-16
申请号：US125284
申请日：1993-09-22
CPC分类号： H01L33/34 , H01L33/0008 , H01S5/3095
摘要： A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.
摘要翻译： 公开了一种以增加的亮度和效率在可见光谱的蓝色区域中发光的发光二极管。 发光二极管包括n型碳化硅衬底; n型碳化硅顶层; 以及n型衬底和n型顶层之间的发光p-n结结构。 p-n结结构由n型碳化硅和p型碳化硅的各部分形成。 二极管还包括在n型顶层和n型衬底之间的装置，用于将n型顶层耦合到发光pn结结构，同时防止n型顶层，p型 接合结构中的层，以及n型衬底。
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2.发明授权Vertical geometry light emitting diode with group III nitride active layer and extended lifetime 失效具有III族氮化物活性层的垂直几何型发光二极管和延长的使用寿命
公开(公告)号：US5523589A
公开(公告)日：1996-06-04
申请号：US309251
申请日：1994-09-20
IPC分类号： H01L33/00 , H01L33/32 , H01L31/0312
CPC分类号： H01L33/32 , H01L33/007
摘要： A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.
摘要翻译： 发光二极管发射在可见光谱的蓝色部分，其特征在于延长的使用寿命。 发光二极管包括导电碳化硅衬底; 与碳化硅衬底的欧姆接触; 选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物的导电缓冲层，其中A和B是III族元素，其中x为零， 或零和1之间的分数，以及碳化硅与这种三元III族氮化物的合金; 以及包括在缓冲层上的p-n结的双异质结构，其中活性和异质结构层选自二元III族氮化物和三元III族氮化物。
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公开(公告)号：US5592501A
公开(公告)日：1997-01-07
申请号：US309247
申请日：1994-09-20
申请人： John A. Edmond , Gary E. Bulman , Hua-Shuang Kong
发明人： John A. Edmond , Gary E. Bulman , Hua-Shuang Kong
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S5/32341 , H01S5/343 , H01S5/021 , H01S5/3201 , H01S5/3226 , H01S5/34333
摘要： A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.
摘要翻译： 公开了一种III族氮化物激光器结构，该有源层包括至少一层III族氮化物或碳化硅与III族氮化物的合金，碳化硅衬底以及在活性层和 碳化硅衬底。 缓冲层选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物，其中A和B是III族元素，其中x是0，1，或者是 零和一个，以及碳化硅与这种三元III族氮化物的合金。 在优选实施例中，激光器结构包括有源层上方的应变最小化接触层，其具有与缓冲层基本相同的晶格常数。
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公开(公告)号：US09490235B2
公开(公告)日：2016-11-08
申请号：US13224850
申请日：2011-09-02
IPC分类号： H01L33/54 , H01L25/075 , H01L25/16 , H01L33/52
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。
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5.发明授权公开(公告)号：US07791061B2
公开(公告)日：2010-09-07
申请号：US11343180
申请日：2006-01-30
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44
摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.
摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。
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6.发明授权公开(公告)号：US08357923B2
公开(公告)日：2013-01-22
申请号：US12834608
申请日：2010-07-12
IPC分类号： H01L29/06
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44
摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.
摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。
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公开(公告)号：US07531840B2
公开(公告)日：2009-05-12
申请号：US11627399
申请日：2007-01-26
IPC分类号： H01L31/0312
CPC分类号： H01L33/145 , H01L33/0004 , H01L33/04
摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。
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8.发明申请NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES 有权用于半导体波形和器件的带有阻挡层的镍粘结体系公开(公告)号：US20080210971A1
公开(公告)日：2008-09-04
申请号：US11844127
申请日：2007-08-23
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
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公开(公告)号：US20080197378A1
公开(公告)日：2008-08-21
申请号：US11676715
申请日：2007-02-20
申请人： Hua-Shuang Kong , John A. Edmond
发明人： Hua-Shuang Kong , John A. Edmond
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/22 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
摘要： A light emitting diode is disclosed that includes a layer of p-type Group III nitride and a layer of n-type Group III nitride on a transparent carrier substrate that has an index of refraction lower then the layer of Group III nitride adjacent the carrier substrate. A layer of transparent adhesive joins the transparent substrate to the Group III nitride layers, and the transparent adhesive has an index of refraction lower than the layer of Group III nitride. The diode includes respective ohmic contacts to the p-type Group III nitride layer and to the n-type Group III nitride layer.
摘要翻译： 公开了一种发光二极管，其包括在透明载体衬底上的p型III族氮化物层和n型III族氮化物层，其折射率低于邻近载体衬底的III族氮化物层 。 透明粘合剂层将透明基材连接到III族氮化物层，并且透明粘合剂的折射率低于III族氮化物层。 二极管包括对p型III族氮化物层和n型III族氮化物层的相应欧姆接触。
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10.发明授权
公开(公告)号：US6120600A
公开(公告)日：2000-09-19
申请号：US59649
申请日：1998-04-13
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
CPC分类号： H01L33/325 , H01L33/0025 , H01L33/007
摘要： A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
摘要翻译： 发光二极管的双异质结构包括具有第一导电类型的氮化镓铝层; 具有相反导电类型的氮化镓铝层; 以及在氮化铝镓层之间的氮化镓的有源层，其中氮化镓层与II族受体和IV族给体共掺杂，其中一种掺杂剂以足以使得 氮化镓层为净导电型，使得有源层与具有相反导电类型的相邻的氮化铝层形成pn结。
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