发明授权
- 专利标题： Resonant electron transfer device
- 专利标题（中）： 共振电子转移装置
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申请号： US935988申请日： 1992-08-27
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公开(公告)号： US5347140A公开(公告)日： 1994-09-13
- 发明人: Yoshihiko Hirai , Kiyoshi Morimoto , Yasuaki Terui , Atsuo Wada , Kenji Okada , Juro Yasui , Masaaki Niwa
- 申请人： Yoshihiko Hirai , Kiyoshi Morimoto , Yasuaki Terui , Atsuo Wada , Kenji Okada , Juro Yasui , Masaaki Niwa
- 申请人地址： JPX Kadoma
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Kadoma
- 优先权： JPX3-215207 19910827; JPX3-232806 19910912; JPX3-232807 19910912; JPX3-253412 19911001; JPX3-255171 19911002; JPX3-292777 19911108
- 主分类号： H01L29/768
- IPC分类号： H01L29/768 ; H01L29/88
摘要：
A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.
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