公开(公告)号：US5244828A

公开(公告)日：1993-09-14

申请号：US934953

申请日：1992-08-25

申请人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

发明人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/335 ,  H01L27/12 ,  H01L29/12

CPC分类号： B82Y10/00 ,  H01L21/2026 ,  H01L27/1203 ,  H01L29/125 ,  H01L29/127 ,  H01L29/66439 ,  Y10S438/962

摘要： The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.

摘要翻译： 制造本发明的量子器件的方法包括以下步骤：在第一绝缘层上形成具有侧面的量子点; 至少在量子点的侧面上形成可用作隧道膜的第二绝缘层; 在第一绝缘层上沉积非晶半导体层以覆盖量子点; 去除位于量子点上方的非晶半导体层的至少一部分; 单晶化与第二绝缘层接触的非晶半导体层的预定部分; 以及在所述第一绝缘层上形成包括所述单结晶半导体部分和所述量子点的量子线。

公开(公告)号：US5347140A

公开(公告)日：1994-09-13

申请号：US935988

申请日：1992-08-27

申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

IPC分类号： H01L29/768 ,  H01L29/88

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/768

摘要： A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.

摘要翻译： 共振电子转移装置包括多个单元，每个单元具有至少一个一维量子线，该量子线具有在一个方向上很长的量子阱，零量子点的基本量化级别高于单向量子线， 尺寸量子线，用于控制量子线和点的各个内部电平的电极，其中量子线和形成一个单元的点通过能够在其间呈现隧道效应的势垒连接。

公开(公告)号：US5296719A

公开(公告)日：1994-03-22

申请号：US915311

申请日：1992-07-20

申请人： Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

发明人： Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

IPC分类号： H01L21/265 ,  H01L21/335 ,  H01L29/12 ,  H01L29/423 ,  H01L29/49 ,  H01L21/308 ,  H01L27/08

CPC分类号： H01L29/4908 ,  B82Y10/00 ,  H01L21/26586 ,  H01L29/125 ,  H01L29/66439 ,  H01L29/78 ,  Y10S438/962

摘要： A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulator film and a gate electrode are formed at the edge of triangular protrusion of a silicon substrate, and a quantum wire is induced by applying a voltage to the gate electrode. A quantum wire structure is fabricated by forming saw-tooth-like protrusions having (111) side planes by performing anisotropic crystalline etching and by oxidizing the silicon substrate with use of the oxide protection film to remain only around the top of the protrusions unoxidized. In another method, an oxide film is formed except around the top of the protrusions whereby a quantum wire is formed at the unoxidized region. In a different method, impurity layers are formed except around the top of the protrusions by ion implantation.

摘要翻译： 量子线形成在硅衬底的三角形突起的顶部。 量子线通过氧化硅层与衬底隔离。 通过不同于衬底的导电类型的杂质层将量子线与衬底隔离。 绝缘膜和栅电极形成在硅衬底的三角形突起的边缘处，并且通过向栅电极施加电压来诱导量子线。 通过形成具有（111）侧面的锯齿形突起，通过进行各向异性的结晶蚀刻，并且通过使用氧化物保护膜氧化硅衬底而制成量子线结构，仅保留在未氧化的突起的顶部。 在另一种方法中，除了突起的顶部之外形成氧化物膜，从而在未氧化区域形成量子线。 在不同的方法中，通过离子注入除了突起的顶部之外形成杂质层。