发明授权
- 专利标题： Method of making dynamic random access semiconductor memory device
- 专利标题（中）： 制作动态随机存取半导体存储器件的方法
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申请号： US77744申请日： 1993-06-18
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公开(公告)号： US5350708A公开(公告)日： 1994-09-27
- 发明人: Atsushi Yagishita , Katsuhiko Hieda , Akihiro Nitayama , Fumio Horiguchi
- 申请人： Atsushi Yagishita , Katsuhiko Hieda , Akihiro Nitayama , Fumio Horiguchi
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX2-340402 19901130; JPX3-286258 19911031
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/8242 ; H01L27/108 ; H01L21/70
摘要：
A groove, which runs vertically and horizontally, is formed in a substrate, thereby a plurality of silicon pillars are formed in a matrix manner. A field oxidation film is formed on the central portion of the groove. A drain diffusion layer is formed on the upper portion of each silicon pillar, and a source diffusion layer is formed on the bottom portion of the groove. A gate electrode, serving as a word line, a storage node contacting the source diffusion layer, and a cell plate are sequentially buried to enclose the surroundings of each silicon pillar, and a bit line is formed in an uppermost layer, thereby a DRAM cell array is structured.
公开/授权文献
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