发明授权
- 专利标题: Semiconductor logic circuits with diodes and amplitude limiter
- 专利标题(中): 具有二极管和限幅器的半导体逻辑电路
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申请号: US937095申请日: 1992-08-31
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公开(公告)号: US5365123A公开(公告)日: 1994-11-15
- 发明人: Yasunobu Nakase , Hiroshi Makino , Kimio Ueda
- 申请人: Yasunobu Nakase , Hiroshi Makino , Kimio Ueda
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-218509 19910829; JPX4-192179 19920720
- 主分类号: H01L21/8249
- IPC分类号: H01L21/8249 ; H01L27/06 ; H03K19/013 ; H03K19/017 ; H03K19/0175 ; H03K19/0185 ; H03K19/08 ; H03K19/0948 ; H03K19/01
摘要:
A CMOS gate circuit constituting the input stage of a semiconductor logic circuit includes a p channel MOS transistor supplied with current from a first power supply potential Vdd for charging an output signal line to a high level potential, a diode provided between MOS transistor and output signal line, an n channel MOS transistor supplied with current from a second power supply potential Vss responsive to an input signal (Vin) for discharging the potential of output signal line, and a diode provided between MOS transistor and output signal line. An input signal potential applied to input stage has its logic amplitude set to be Vdd-Vf to Vf. Vf represents the forward voltage of the diodes and the second power supply potential is set to be ground potential GND. The input signal potential has its logic amplitude limited, current flows through the diodes in its steady state, and, therefore, the logic amplitude of the signal potential Vout of output signal line becomes Vdd-Vf to Vf.
公开/授权文献
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