A method of making a memory cell having a transistor and a capacitor of a semiconductor memory device comprises the steps of: forming on a substrate on a surface of which the transistor is formed, an interlayer insulating film having a contact hole reaching a selected portion of the transistors; introducing a selected metal into a surface of the selected portion of the transistor exposed to the contact hole and a surface of the interlayer insulating film at portions thereof where a lower electrode of the capacitor is to be formed; forming a first conductive film having a pattern of the lower electrode of the capacitor by depositing a selected conductive material on the portions where the selected metal has been introduced; forming a capacitor insulating film on the first conductive film; and forming a second conductive film which provides an upper electrode of the capacitor on the capacitor insulating film; wherein the selected conductive material and the selected metal have such a relationship with each other that, when the first conductive layer is formed by depositing the selected conductive material on the portions where the selected metal has been introduced, the selected metal acts as a catalyzer to cause the selected conductive material to develop whisker crystal growth, thereby forming fine projections on an upper surface of the first conductive film.