发明授权
- 专利标题: Methods and apparatus for contamination control in plasma processing
- 专利标题(中): 等离子体处理污染控制的方法和装置
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申请号: US425659申请日: 1989-10-23
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公开(公告)号: US5367139A公开(公告)日: 1994-11-22
- 发明人: Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
- 申请人: Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: C23F4/00
- IPC分类号: C23F4/00 ; C23C16/44 ; C23C16/515 ; H01J37/32 ; H01L21/302 ; B23K9/00
摘要:
Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open.
公开/授权文献
- US5606245A Power supply systems 公开/授权日:1997-02-25