Methods and apparatus for contamination control in plasma processing
    1.
    发明授权
    Methods and apparatus for contamination control in plasma processing 失效
    等离子体处理污染控制的方法和装置

    公开(公告)号:US5387777A

    公开(公告)日:1995-02-07

    申请号:US903644

    申请日:1992-06-24

    摘要: Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.

    摘要翻译: 等离子体处理中的污染水平通过防止颗粒的形成,通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒而减少等离子体处理中的污染水平。 用于防止颗粒形成的一些技术包括通过周期性地脉冲等离子体能量源或者施加能量以提供诸如机械冲击波,声应力,超声应力,振动应力,热应力和压力应力之类的机械搅拌来中断等离子体 。 经过一段时间的施加应力,泵出一个工具(如果使用等离子体,则首先停止发光),从下部电极和其他表面清除通风,打开和剥落或颗粒物质。 过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。 按照此过程,然后将该工具用于产品运行。 或者,半导体工艺产量的改善可以通过添加试剂来吸收污染物颗粒的化学前体并且在等离子体处理之前通过过滤来自原料气的颗粒来实现。 通过激光散射确定施加的应力的效率和终点,使用脉冲或连续的激光源,例如, HeNe激光。

    Methods and apparatus for contamination control in plasma processing
    2.
    发明授权
    Methods and apparatus for contamination control in plasma processing 失效
    等离子体处理污染控制的方法和装置

    公开(公告)号:US5367139A

    公开(公告)日:1994-11-22

    申请号:US425659

    申请日:1989-10-23

    摘要: Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open.

    摘要翻译: 等离子体处理中的污染水平通过防止颗粒的形成,通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒而减少等离子体处理中的污染水平。 用于防止颗粒形成的一些技术包括通过周期性地脉冲等离子体能量源或者施加能量以提供诸如机械冲击波,声应力,超声应力,振动应力,热应力和压力应力之类的机械搅拌来中断等离子体 。 经过一段时间的施加应力,泵出一个工具(如果使用等离子体,则首先停止发光),从下部电极和其他表面清除通风,打开和剥落或颗粒物质。 过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。

    Portable particle detector assembly
    3.
    发明授权
    Portable particle detector assembly 失效
    便携式粒子检测器组件

    公开(公告)号:US5255089A

    公开(公告)日:1993-10-19

    申请号:US858183

    申请日:1992-03-26

    CPC分类号: H04N7/183

    摘要: A portable particle detector assembly for detecting particle contamination in the reaction chamber of a plasma processing tool used in semiconductor manufacture. The detector is comprised of a scanner assembly for providing a scanned laser beam and a video camera placed opposite the scanner assembly for monitoring light scattered by particles within the volume of the reaction chamber.

    摘要翻译: 一种便携式粒子检测器组件,用于检测用于半导体制造的等离子体处理工具的反应室中的颗粒污染。 检测器由用于提供扫描激光束的扫描仪组件和与扫描器组件相对放置的摄像机组成,用于监测反应室体积内的颗粒散射的光。

    SYSTEMS AND METHODS FOR INSPECTING A WAFER WITH INCREASED SENSITIVITY
    5.
    发明申请
    SYSTEMS AND METHODS FOR INSPECTING A WAFER WITH INCREASED SENSITIVITY 有权
    用于检测具有增强灵敏度的波形的系统和方法

    公开(公告)号:US20090009754A1

    公开(公告)日:2009-01-08

    申请号:US12097172

    申请日:2006-12-14

    IPC分类号: G01N21/88

    CPC分类号: G01N21/9501

    摘要: One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

    摘要翻译: 一个系统包括检查子系统,该检查子系统被配置为将光引导到晶片上的一个点上,并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统,该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体,从而增加了系统的灵敏度。 另外,该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

    Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
    6.
    发明授权
    Computer-implemented methods and systems for determining a configuration for a light scattering inspection system 有权
    用于确定光散射检查系统的配置的计算机实现的方法和系统

    公开(公告)号:US07436505B2

    公开(公告)日:2008-10-14

    申请号:US11278624

    申请日:2006-04-04

    IPC分类号: G01N21/00

    CPC分类号: G01N21/9501

    摘要: Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.

    摘要翻译: 提供了用于确定光散射检查系统的配置的计算机实现的方法和系统。 一种计算机实现的方法包括:通过在检查系统的散射半球上的光散射检查系统来确定用于样本获取的数据和样本上的潜在缺陷的信噪比值的三维图 。 该方法还包括基于三维图确定散射半球的一个或多个部分,其中信噪比值高于散射半球的其它部分。 此外,该方法包括基于散射半球的一个或多个部分来确定检查系统的检测子系统的配置。

    Systems and methods for inspecting a wafer with increased sensitivity
    7.
    发明授权
    Systems and methods for inspecting a wafer with increased sensitivity 有权
    增加灵敏度检查晶圆的系统和方法

    公开(公告)号:US07697129B2

    公开(公告)日:2010-04-13

    申请号:US12097172

    申请日:2006-12-14

    IPC分类号: G01N21/00

    CPC分类号: G01N21/9501

    摘要: Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

    摘要翻译: 提供了用于检查具有增加的灵敏度的晶片的系统和方法。 一个系统包括检查子系统,该检查子系统被配置为将光引导到晶片上的一个点上,并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统,该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体,从而增加了系统的灵敏度。 另外,该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

    Systems and methods for inspecting a wafer with increased sensitivity
    8.
    发明授权
    Systems and methods for inspecting a wafer with increased sensitivity 有权
    增加灵敏度检查晶圆的系统和方法

    公开(公告)号:US07372559B2

    公开(公告)日:2008-05-13

    申请号:US11302936

    申请日:2005-12-14

    IPC分类号: G01N21/00

    CPC分类号: G01N21/9501

    摘要: Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

    摘要翻译: 提供了用于检查具有增加的灵敏度的晶片的系统和方法。 一个系统包括检查子系统,该检查子系统被配置为将光引导到晶片上的一个点上,并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统,该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体,从而增加了系统的灵敏度。 另外,该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。