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公开(公告)号：US07470627B2
公开(公告)日：2008-12-30
申请号：US10966232
申请日：2004-10-15
IPC分类号： H01L21/205 , C23C4/10
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
摘要翻译： 提供等离子体处理室，其提供改进的晶片面积压力控制。 等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。 该装置的一部分将是蚀刻剂气源和排气口。 限制环限定晶片上方的区域。 晶片面积压力取决于限制环上的压降。 限制环是提供晶圆面积压力控制范围大于100％的晶圆区域压力控制装置的一部分。 这样的晶片面积压力控制装置可以是三个可调约束环和保持器上的限制块，其可用于提供期望的晶片面积压力控制。
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公开(公告)号：US06490536B1
公开(公告)日：2002-12-03
申请号：US09661860
申请日：2000-09-14
申请人： Albert R. Ellingboe , Bruno Morel
发明人： Albert R. Ellingboe , Bruno Morel
IPC分类号： C23C1650
CPC分类号： H01J37/32174
摘要： A load simulator and switch are connected to a power source of a plasma processing device. The switch allows the load simulator to be electrically connected to the power source to allow testing of the power source. The switch and load simulator allow the testing of the power source without mechanically removing the power source from the plasma processing device. In addition, the switch allows the connection of the load simulator to the power source while the power source is on, avoiding the requirement of turning off the power source before connecting the load simulator.
摘要翻译： 负载模拟器和开关连接到等离子体处理装置的电源。 该开关允许负载模拟器电连接到电源以允许测试电源。 开关和负载模拟器允许对电源进行测试，而无需从等离子体处理装置机械地移除电源。 此外，该开关允许在电源打开时将负载模拟器连接到电源，避免在连接负载模拟器之前关闭电源的要求。
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公开(公告)号：US5387777A
公开(公告)日：1995-02-07
申请号：US903644
申请日：1992-06-24
申请人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
发明人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
IPC分类号： C23F4/00 , C23C16/44 , C23C16/515 , H01J37/32 , H01L21/302 , B23K10/00 , B05D3/06 , B44C1/22
CPC分类号： H01J37/32862 , C23C16/44 , C23C16/4401 , C23C16/515 , H01J2237/022 , Y10S156/916
摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.
摘要翻译： 等离子体处理中的污染水平通过防止颗粒的形成，通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒而减少等离子体处理中的污染水平。 用于防止颗粒形成的一些技术包括通过周期性地脉冲等离子体能量源或者施加能量以提供诸如机械冲击波，声应力，超声应力，振动应力，热应力和压力应力之类的机械搅拌来中断等离子体 。 经过一段时间的施加应力，泵出一个工具（如果使用等离子体，则首先停止发光），从下部电极和其他表面清除通风，打开和剥落或颗粒物质。 过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。 按照此过程，然后将该工具用于产品运行。 或者，半导体工艺产量的改善可以通过添加试剂来吸收污染物颗粒的化学前体并且在等离子体处理之前通过过滤来自原料气的颗粒来实现。 通过激光散射确定施加的应力的效率和终点，使用脉冲或连续的激光源，例如， HeNe激光。
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4.发明授权公开(公告)号：US08845855B2
公开(公告)日：2014-09-30
申请号：US11878617
申请日：2007-07-25
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/3255
摘要： A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.
摘要翻译： 一种用于等离子体反应室的硅电极，其中可以执行诸如单个晶片的半导体衬底的处理以及利用电极处理半导体衬底的方法。 电极是电阻率小于1欧姆 - 厘米的低电阻率电极。 电极可以是零缺陷单晶硅或碳化硅电极，例如结合或夹持支撑的喷头电极，例如温度控制的板或环。 喷头电极可以是具有均匀厚度的圆盘的形式，并且可以在支撑环和电极之间提供弹性体接头。 电极可以包括具有0.020至0.030英寸直径的气体出口。
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公开(公告)号：US07524397B2
公开(公告)日：2009-04-28
申请号：US10040326
申请日：2002-01-03
申请人： Fangli Hao , Albert R. Ellingboe , Eric H. Lenz
发明人： Fangli Hao , Albert R. Ellingboe , Eric H. Lenz
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32642
摘要： A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a process chamber within which a plasma is both ignited and sustained for processing. The plasma processing system further includes an electrode disposed at the lower end of the process chamber. The electrode is configured for generating an electric field inside the process chamber. The plasma processing system also includes a component for controlling an impedance between the electrode and the plasma. The impedance is arranged to affect the electric field to improve processing uniformity across the surface of the substrate.
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公开(公告)号：US5918140A
公开(公告)日：1999-06-29
申请号：US876414
申请日：1997-06-16
IPC分类号： H01L21/225 , H01L21/223
CPC分类号： H01L21/2254
摘要： A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
摘要翻译： 使用气体浸渍激光掺杂（GILD）技术增强可实现掺杂剂掺杂的半导体掺杂工艺。 增强的掺杂是通过首先在半导体表面上沉积掺杂剂原子的薄层，然后从激光或离子束暴露于一个或多个脉冲来实现的，该激光或离子束将半导体的一部分熔化到期望的深度，从而导致 掺杂原子被掺入到熔融区域中。 在熔融区域重结晶之后，掺杂剂原子是电活性的。 通过等离子体增强化学气相沉积（PECVD）或其他已知的沉积技术沉积掺杂剂原子。
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公开(公告)号：US06949204B1
公开(公告)日：2005-09-27
申请号：US10771112
申请日：2004-02-02
申请人： Eric Lenz , Albert R. Ellingboe , Fangli Hao
发明人： Eric Lenz , Albert R. Ellingboe , Fangli Hao
IPC分类号： H01J37/32 , H01L21/00 , C23F1/00 , C23C16/00 , H01L31/306
CPC分类号： H01L21/67069 , H01J37/32458
摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.
摘要翻译： 提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。 真空室具有第一部分相邻的主腔。 真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。 口袋与主腔流体连通。 当在主腔中产生真空时，口袋中的压力也降低。 结果，盖的第二部分通过袋中的真空而变形。 然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。
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公开(公告)号：US06823815B2
公开(公告)日：2004-11-30
申请号：US10225655
申请日：2002-08-21
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
摘要翻译： 提供等离子体处理室，其提供改进的晶片面积压力控制。 等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。 该装置的一部分将是蚀刻剂气源和排气口。 限制环限定晶片上方的区域。 晶片面积压力取决于限制环上的压降。 限制环是提供晶圆面积压力控制范围大于100％的晶圆区域压力控制装置的一部分。 这样的晶片面积压力控制装置可以是三个可调约束环和保持器上的限制块，其可用于提供期望的晶片面积压力控制。
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公开(公告)号：US06492774B1
公开(公告)日：2002-12-10
申请号：US09684695
申请日：2000-10-04
IPC分类号： H01J724
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
摘要翻译： 提供等离子体处理室，其提供改进的晶片面积压力控制。 等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。 该装置的一部分将是蚀刻剂气源和排气口。 限制环限定晶片上方的区域。 晶片面积压力取决于限制环上的压降。 限制环是提供晶圆面积压力控制范围大于100％的晶圆区域压力控制装置的一部分。 这样的晶片面积压力控制装置可以是三个可调约束环和保持器上的限制块，其可用于提供期望的晶片面积压力控制。
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10.发明授权Thick adherent dielectric films on plastic substrates and method for depositing same 失效塑料基底上的厚粘附介质膜及其沉积方法公开(公告)号：US06436739B1
公开(公告)日：2002-08-20
申请号：US09560058
申请日：2000-04-27
IPC分类号： H01L2184
CPC分类号： C23C16/402 , C23C14/10 , C23C14/541 , C23C16/46
摘要： Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 &mgr;m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 &mgr;m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.
摘要翻译： 沉积在塑料基板上的厚粘附介质膜用作热障层以保护塑料基板免受高温的影响，例如在随后沉积在电介质膜上的层的激光退火期间发生。 优选的是，阻隔层具有以下特性：1μm以上的厚度，粘附在塑料基板上，在温度循环时不会剥离，在受到弯曲时具有很少或没有裂纹并且不会发生裂纹 当浸没在流体中时剥离，电绝缘并且优选是透明的。 厚的阻挡层可以由各种电介质和某些金属氧化物构成，并且可以通过各种已知的沉积技术沉积在各种塑料基板上。 在塑料基板上形成厚的阻挡层的方法的关键是在阻挡层的沉积过程中保持基板的冷却。 衬底的冷却可以通过使用其上定位有塑料衬底的冷却卡盘，并且通过引导诸如He，Ar和N2之类的冷却气体在塑料衬底和冷却卡盘之间来实现。 高达约5μm的厚粘附介质膜已经沉积在包括上述属性的塑料基板上，并且使得塑料基板能够承受施加到沉积在电介质膜上的材料的激光加工温度。
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