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公开(公告)号：US4675072A
公开(公告)日：1987-06-23
申请号：US878144
申请日：1986-06-25
IPC分类号： H01L21/302 , C23F1/00 , G01N21/64 , H01J37/32 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32935 , G01N21/6402 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , G01N2201/1222
摘要： Laser induced fluorescence is utilized to detect and control the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to adjacent layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are automatically de-energized.
摘要翻译： 通过检测蚀刻等离子体中来自晶片的所选次要物质的浓度的大的变化，利用激光诱导荧光来检测和控制晶片中给定层的反应离子蚀刻。 为了提供适当的端点检测，与所述晶片中的相邻层相比，该选择的次要物质必须以与蚀刻的给定层中的显着不同的浓度存在。 在一个实施例中，当检测到所选择的次要物质浓度的大变化时，反应器的RF电极自动断电。
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公开(公告)号：US5367139A
公开(公告)日：1994-11-22
申请号：US425659
申请日：1989-10-23
申请人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
发明人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
IPC分类号： C23F4/00 , C23C16/44 , C23C16/515 , H01J37/32 , H01L21/302 , B23K9/00
CPC分类号： H01J37/32862 , C23C16/44 , C23C16/4401 , C23C16/515 , H01J2237/022 , Y10S156/916
摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open.
摘要翻译： 等离子体处理中的污染水平通过防止颗粒的形成，通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒而减少等离子体处理中的污染水平。 用于防止颗粒形成的一些技术包括通过周期性地脉冲等离子体能量源或者施加能量以提供诸如机械冲击波，声应力，超声应力，振动应力，热应力和压力应力之类的机械搅拌来中断等离子体 。 经过一段时间的施加应力，泵出一个工具（如果使用等离子体，则首先停止发光），从下部电极和其他表面清除通风，打开和剥落或颗粒物质。 过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。
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公开(公告)号：US5420057A
公开(公告)日：1995-05-30
申请号：US269856
申请日：1994-06-30
申请人： Reid S. Bennett , Dennis S. Yee
发明人： Reid S. Bennett , Dennis S. Yee
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/336 , H01L21/60 , H01L29/78 , H01L21/265
CPC分类号： H01L21/76897 , H01L29/66575 , Y10S148/141
摘要： A self-aligned method of forming contacts to a transistor gate, source and drain reduces the required spacing between the nominal center of the gate and electrode at little cost in process complexity by the provision of a sidewall positioned above the LDD-defining sidewall and extending above the top Of the gate by a buffer amount sufficient to protect the gate during the process of opening a source or drain contact.
摘要翻译： 形成与晶体管栅极，源极和漏极的接触的自对准方法通过提供位于LDD限定侧壁上方的侧壁并且延伸的方式减少了栅极和电极的标称中心之间所需的间隔，而在工艺复杂性方面成本较低 在门的顶部上方具有足以在打开源极或漏极接触的过程中保护栅极的缓冲量。
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公开(公告)号：US5387777A
公开(公告)日：1995-02-07
申请号：US903644
申请日：1992-06-24
申请人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
发明人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
IPC分类号： C23F4/00 , C23C16/44 , C23C16/515 , H01J37/32 , H01L21/302 , B23K10/00 , B05D3/06 , B44C1/22
CPC分类号： H01J37/32862 , C23C16/44 , C23C16/4401 , C23C16/515 , H01J2237/022 , Y10S156/916
摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.
摘要翻译： 等离子体处理中的污染水平通过防止颗粒的形成，通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒而减少等离子体处理中的污染水平。 用于防止颗粒形成的一些技术包括通过周期性地脉冲等离子体能量源或者施加能量以提供诸如机械冲击波，声应力，超声应力，振动应力，热应力和压力应力之类的机械搅拌来中断等离子体 。 经过一段时间的施加应力，泵出一个工具（如果使用等离子体，则首先停止发光），从下部电极和其他表面清除通风，打开和剥落或颗粒物质。 过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。 按照此过程，然后将该工具用于产品运行。 或者，半导体工艺产量的改善可以通过添加试剂来吸收污染物颗粒的化学前体并且在等离子体处理之前通过过滤来自原料气的颗粒来实现。 通过激光散射确定施加的应力的效率和终点，使用脉冲或连续的激光源，例如， HeNe激光。
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