Invention Grant
- Patent Title: Semiconductor circuit device and method for production thereof
- Patent Title (中): 半导体电路装置及其制造方法
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Application No.: US171396Application Date: 1993-12-22
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Publication No.: US5369043APublication Date: 1994-11-29
- Inventor: Fumiaki Hyuga , Kenji Shiojima , Tatsuo Aoki , Kazuyoshi Asai , Masami Tokumitsu , Kazumi Nishimura , Yasuro Yamane
- Applicant: Fumiaki Hyuga , Kenji Shiojima , Tatsuo Aoki , Kazuyoshi Asai , Masami Tokumitsu , Kazumi Nishimura , Yasuro Yamane
- Applicant Address: JPX Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX4-358052 19921225; JPX5-014405 19930104
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L21/8252 ; H01L27/06 ; H01L29/08 ; H01L29/80 ; H01L21/265
Abstract:
A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.
Public/Granted literature
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