公开(公告)号：US5406098A

公开(公告)日：1995-04-11

申请号：US285307

申请日：1994-08-03

Applicant: Fumiaki Hyuga ,  Kenji Shiojima ,  Tatsuo Aoki ,  Kazuyoshi Asai ,  Masami Tokumitsu ,  Kazumi Nishimura ,  Yasuro Yamane

Inventor： Fumiaki Hyuga ,  Kenji Shiojima ,  Tatsuo Aoki ,  Kazuyoshi Asai ,  Masami Tokumitsu ,  Kazumi Nishimura ,  Yasuro Yamane

IPC: H01L21/335 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/08 ,  H01L29/80

CPC classification number: H01L29/66462 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/802

Abstract: A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.

Abstract translation: 公开了半导体电路器件，其中在衬底中形成杂质离子注入区，在杂质离子注入区上方形成肖特基结型栅电极，并且在栅极的两侧形成源电极和漏电极 电极。 在该器件中，在衬底和电极之间形成InGaP阻挡层，在InGaP阻挡层和电极之间形成包含不含In的半导体的覆盖层，栅电极由难熔金属 。

公开(公告)号：US5369043A

公开(公告)日：1994-11-29

申请号：US171396

申请日：1993-12-22

Applicant: Fumiaki Hyuga ,  Kenji Shiojima ,  Tatsuo Aoki ,  Kazuyoshi Asai ,  Masami Tokumitsu ,  Kazumi Nishimura ,  Yasuro Yamane

Inventor： Fumiaki Hyuga ,  Kenji Shiojima ,  Tatsuo Aoki ,  Kazuyoshi Asai ,  Masami Tokumitsu ,  Kazumi Nishimura ,  Yasuro Yamane

IPC: H01L21/335 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/08 ,  H01L29/80 ,  H01L21/265

CPC classification number: H01L29/66462 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/802

Abstract: A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.

Abstract translation: 公开了半导体电路器件，其中在衬底中形成杂质离子注入区，在杂质离子注入区上方形成肖特基结型栅电极，并且在栅极的两侧形成源电极和漏电极 电极。 在该器件中，在衬底和电极之间形成InGaP阻挡层，在InGaP阻挡层和电极之间形成包含不含In的半导体的覆盖层，栅电极由难熔金属 。

公开(公告)号：US5639686A

公开(公告)日：1997-06-17

申请号：US133211

申请日：1993-10-07

Applicant: Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

Inventor： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC: H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H01L21/44 ,  H01L21/48

CPC classification number: H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

Abstract: A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower circuit resistance and lower parasitic interactions; an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyimide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

Abstract translation: 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导体配置不仅克服了传统线路设计的电路封装问题，而且提供了性能参数的额外改进，例如较低的电路电阻和较低的寄生相互作用; 制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰亚胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。

公开(公告)号：US5281769A

公开(公告)日：1994-01-25

申请号：US787136

申请日：1991-11-04

Applicant: Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

Inventor： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC: H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H05K1/00

CPC classification number: H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

Abstract: A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower circuit resistance and lower parasitic interactions; an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyimide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

Abstract translation: 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导体配置不仅克服了传统线路设计的电路封装问题，而且提供了性能参数的额外改进，例如较低的电路电阻和较低的寄生相互作用; 制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰亚胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。

公开(公告)号：US5652157A

公开(公告)日：1997-07-29

申请号：US608520

申请日：1996-02-28

Applicant: Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

Inventor： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC: H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H01L21/265

CPC classification number: H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

Abstract: A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower resistance and lower parasitic interactions, an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyamide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

Abstract translation: 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导线配置不仅克服了传统线路设计的这种电路封装问题，而且提供了性能参数的额外改进，例如较低电阻和较低的寄生相互作用，制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。

公开(公告)号：US5550068A

公开(公告)日：1996-08-27

申请号：US449277

申请日：1995-05-24

Applicant: Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

Inventor： Makoto Hirano ,  Kazuyoshi Asai ,  Yuhki Imai ,  Masami Tokumitsu ,  Tsuneo Tokumitsu ,  Ichihiko Toyoda

IPC: H01L21/285 ,  H01L21/338 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/13 ,  H01L21/265

CPC classification number: H01L29/66863 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/28593 ,  H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903

Abstract: A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower circuit resistance and lower parasitic interactions; an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyimide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.

Abstract translation: 在微波信号传输的集成电路（IC）器件中，主动和无源器件的制造提出了新的设计理念。 高电路封装密度是理想的，但是现有的扁平扁平扁平导体的结构对实现这样的目的具有物理限制。 新的导体配置不仅克服了传统线路设计的电路封装问题，而且提供了性能参数的额外改进，例如较低的电路电阻和较低的寄生相互作用; 制造电路以设计规格并以低成本提高可靠性的能力。 新的概念已被应用于传输线，电容器，电感器，空气桥的制造以及制定FET的制造步骤。 聚酰亚胺膜能够在本发明中进行改进的制造步骤，并且还已经证明了用于聚酰亚胺材料的新的加工技术。