发明授权
- 专利标题: Valve and semiconductor fabricating equipment using the same
- 专利标题(中): 阀门和半导体制造设备使用相同
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申请号: US138051申请日: 1993-10-19
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公开(公告)号: US5380396A公开(公告)日: 1995-01-10
- 发明人: Mitsuhiro Shikida , Kazuo Sato , Yoshio Kawamura , Shinji Tanaka , Yasuaki Horiuchi , Akira Koide , Toshimitsu Miyada
- 申请人: Mitsuhiro Shikida , Kazuo Sato , Yoshio Kawamura , Shinji Tanaka , Yasuaki Horiuchi , Akira Koide , Toshimitsu Miyada
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-127705 19910530; JPX3-250721 19910930
- 主分类号: F16K31/02
- IPC分类号: F16K31/02 ; F04B43/04 ; F15C5/00 ; F16K99/00 ; H01L21/205 ; B44C1/22 ; C23C16/00 ; C23F1/00
摘要:
Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.
公开/授权文献
- US6073477A Digital bond tester 公开/授权日:2000-06-13
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