公开(公告)号：US5380396A

公开(公告)日：1995-01-10

申请号：US138051

申请日：1993-10-19

申请人： Mitsuhiro Shikida ,  Kazuo Sato ,  Yoshio Kawamura ,  Shinji Tanaka ,  Yasuaki Horiuchi ,  Akira Koide ,  Toshimitsu Miyada

发明人： Mitsuhiro Shikida ,  Kazuo Sato ,  Yoshio Kawamura ,  Shinji Tanaka ,  Yasuaki Horiuchi ,  Akira Koide ,  Toshimitsu Miyada

IPC分类号： F16K31/02 ,  F04B43/04 ,  F15C5/00 ,  F16K99/00 ,  H01L21/205 ,  B44C1/22 ,  C23C16/00 ,  C23F1/00

CPC分类号： F16K99/0001 ,  F04B43/043 ,  F15C5/00 ,  F16K99/0015 ,  F16K99/0051 ,  F16K2099/0074 ,  F16K2099/0082 ,  Y10S251/901 ,  Y10T137/6416 ,  Y10T137/87249

摘要： Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.

摘要翻译： 公开了一种能够以高速切换在真空室内被引入的气体的气阀，从而提高了生长在基板上的半导体薄膜的组合的可控性，并缩短了薄膜生长所需的时间。 气阀包括一对平行板电极之间的可弯曲膜，由此通过静电力操作膜，并且打开和关闭用于将气体释放到安装在气室的壁表面上的基板的端口和用于排出不必要的端口 气体到排气通道。 气体阀安装在真空室内的基板附近，用于以薄膜生长所需的最小量供应工作气体。

公开(公告)号：US5284179A

公开(公告)日：1994-02-08

申请号：US890711

申请日：1992-05-29

申请人： Mitsuhiro Shikida ,  Kazuo Sato ,  Yoshio Kawamura ,  Shinji Tanaka ,  Yasuaki Horiuchi ,  Akira Koide ,  Toshimitsu Miyada

发明人： Mitsuhiro Shikida ,  Kazuo Sato ,  Yoshio Kawamura ,  Shinji Tanaka ,  Yasuaki Horiuchi ,  Akira Koide ,  Toshimitsu Miyada

IPC分类号： F16K31/02 ,  F04B43/04 ,  F15C5/00 ,  F16K99/00 ,  H01L21/205 ,  F16K11/24 ,  F16K31/06

CPC分类号： F16K99/0001 ,  F04B43/043 ,  F15C5/00 ,  F16K99/0015 ,  F16K99/0051 ,  F16K2099/0074 ,  F16K2099/0082 ,  Y10S251/901 ,  Y10T137/6416 ,  Y10T137/87249

摘要： Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.

摘要翻译： 公开了一种能够以高速切换在真空室内被引入的气体的气阀，从而提高了生长在基板上的半导体薄膜的组合的可控性，并缩短了薄膜生长所需的时间。 气阀包括一对平行板电极之间的可弯曲膜，由此通过静电力操作膜，并且打开和关闭用于将气体释放到安装在气室的壁表面上的基板的端口和用于排出不必要的端口 气体到排气通道。 气体阀安装在真空室内的基板附近，用于以薄膜生长所需的最小量供应工作气体。