发明授权
US5380674A Method of fabricating semiconductor memory device having trench
capacitor and electrical contact thereto
失效
制造具有沟槽电容器并与其电接触的半导体存储器件的方法
- 专利标题： Method of fabricating semiconductor memory device having trench capacitor and electrical contact thereto
- 专利标题（中）： 制造具有沟槽电容器并与其电接触的半导体存储器件的方法
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申请号： US962509申请日： 1992-10-16
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公开(公告)号： US5380674A公开(公告)日： 1995-01-10
- 发明人: Shin'ichiro Kimura , Takeshi Sakata , Kiyoo Itoh
- 申请人： Shin'ichiro Kimura , Takeshi Sakata , Kiyoo Itoh
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-270711 19911018
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108 ; H01L21/70 ; H01L27/00
摘要：
A semiconductor memory device where trench capacitors for charge storage are arranged respectively to symmetric positions with respect to a gate electrode of a field effect transistor.Since electrodes of the capacitor are connected to source or drain of the field effect transistor in self alignment, a required area is small and a fabricating method is quite simple in comparison with the prior art.
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